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BSP50H6327XTSA1

Infineon Technologies

BSP50H6327XTSA1 by Infineon Technologies

Infineon's BSP50H6327XTSA1 is a NPN BJT with Darlington configuration, ideal for switching applications. Features include hFE of 2000, VCE of 45V, and IC of 1A. With a fT of 200MHz, this transistor offers fast turn-on/off times making it suitable for high-speed operations in compact designs.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 25,000 parts In-Stock

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$0.160

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$0.160

Arrow

USA . 2,000 parts In-Stock

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$0.167

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$0.153

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$0.167

$0.153

Chip1Stop

Japan . 2,000 parts In-Stock

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$0.166

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EBV Elektronik

Germany . 1,000 parts In-Stock

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Vyrian

USA . 6,393 parts In-Stock

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Rutronik

Germany . 5,000 parts In-Stock

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$0.108

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$0.104

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$0.104

DigiKey Marketplace

USA . 3,900 parts In-Stock

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VNN

France . 1,211 parts In-Stock

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NAC Semi

USA . 1,000 parts In-Stock

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$0.570

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Nova Conductors

Japan . 700 parts In-Stock

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700

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Digiode

USA . 391 parts In-Stock

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Semicontronic

India . 10,150 parts In-Stock

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$0.120

100+ parts

$0.117

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$0.116

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$0.117

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Ampacity Inc.

Singapore . 9,855 parts In-Stock

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$0.120

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$0.120

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Modulus Dynamics

Lithuania . 15,104 parts In-Stock

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$0.326

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$0.313

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$0.300

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$0.326

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Corohmni

South Africa . 502 parts In-Stock

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$0.326

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Aztec Data Supply Inc.

USA . 1,176 parts In-Stock

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$1.719

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AZTECH Wire

Italy . 938 parts In-Stock

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$16.830

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Component Stockers USA

USA . 10,596 parts In-Stock

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$0.240

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$0.200

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Glotronic Ltd.

UK . 4,000 parts In-Stock

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Argo Parts USA

USA . 3,658 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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Eastek

USA . 2,000 parts In-Stock

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$0.469

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Robosynatics

Brazil . 950 parts In-Stock

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$0.245

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Lucentia Tech

USA . 950 parts In-Stock

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Continental Prestige Electronics

USA . 631 parts In-Stock

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Corphita

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Bastille Electronics

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Overview

Discover the Infineon Technologies BSP50H6327XTSA1, a high-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance in switching applications. Manufactured by industry leader Infineon Technologies, this NPN Darlington transistor features a built-in diode and resistor for added convenience and efficiency. With a compact rectangular package style and gull wing terminals, this transistor is perfect for surface mount applications. Experience superior reliability and fast switching times with the BSP50H6327XTSA1, making it an ideal choice for a wide range of electronic projects. Upgrade your designs today with this cutting-edge transistor from Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: NPN

Commonly used and versatile for various circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Convenient built-in features for certain applications.

Transistor Application: SWITCHING

Suitable for switching circuits with fast turn on/off times.

Surface Mount: YES

Can be easily mounted on PCBs for efficient assembly.

Maximum Collector-Emitter Voltage: 45 V

Can handle moderate voltage requirements in circuits.

Maximum Collector Current (IC): 1 A

Capable of handling high current loads.

Nominal Transition Frequency (fT): 200 MHz

Ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP50H6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1500 ns

Maximum Turn On Time (ton):

400 ns

Trade Compliance

BSP50H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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