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BSP51

Onsemi

BSP51 by Onsemi

BSP51 by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 1.3V, hFE of 2000, and can handle a max IC of 0.5A. With a package style of small outline and surface mount capability, it operates at temperatures up to 150 °C.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

$0.340

100+ parts

$0.330

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$0.330

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2,500

$0.340

$0.330

$0.330

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Distributors (In-Stock)

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Vyrian

USA . 7,644 parts In-Stock

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7,644

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Digiode

USA . 5,582 parts In-Stock

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5,582

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Chip Stock

USA . 2,605 parts In-Stock

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Anansix

USA . 2,063 parts In-Stock

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2,063

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ComSIT Distribution GmbH

Germany . 1,081 parts In-Stock

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1,081

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ComSIT USA

USA . 1,000 parts In-Stock

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Connector Distribution Corp

USA . 900 parts In-Stock

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900

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Right Parts Inc.

USA . 900 parts In-Stock

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900

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Fibra_Brandt Electronic GMBH

Germany . 95 parts In-Stock

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95

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Distributors (Availability)

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AZTECH Wire

Italy . 7,644 parts In-Stock

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$0.340

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7,644

$0.340

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Modulus Dynamics

Lithuania . 11,268 parts In-Stock

1+ parts

$1.104

100+ parts

$1.060

1k+ parts

$1.016

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11,268

$1.104

$1.060

$1.016

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One Stop Electronics

USA . 629 parts In-Stock

1+ parts

$24.050

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629

$24.050

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Authorized Procurement Solutions

USA . 265,000 parts In-Stock

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265,000

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Kepictronics

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 7,304 parts In-Stock

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Northwest PG Solutions

USA . 6,961 parts In-Stock

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SupplyDigital Components

Austria . 5,820 parts In-Stock

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UNI Independent Distributors

Spain . 4,840 parts In-Stock

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Corphita

USA . 3,990 parts In-Stock

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3,990

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Supply Digital

USA . 3,779 parts In-Stock

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Problanco Electronics

Mexico . 3,767 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Native Components

USA . 1,926 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,840 parts In-Stock

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1,840

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Assy Fe

Spain . 1,185 parts In-Stock

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TANS Electronics

Latvia . 550 parts In-Stock

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550

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UHIMA Technologies

Türkiye . 426 parts In-Stock

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426

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Corohmni

South Africa . 373 parts In-Stock

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373

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Overview

Upgrade your electronic projects with the BSP51 from Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Designed with a Darlington configuration and built-in diode and resistor, this NPN transistor is perfect for switching applications. With a high DC current gain and low VCEsat, the BSP51 delivers reliable performance and efficiency. Whether you're working on amplifiers, power supplies, or motor controls, this transistor offers exceptional value and benefits to meet your needs. Trust Onsemi for superior quality and innovation in semiconductor solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile for different uses.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor add functionality and convenience for specific circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in on/off circuit functions.

Surface Mount: YES

Surface mount technology allows for easy and compact circuit board assembly, saving space and increasing efficiency in electronic devices.

Maximum VCEsat: 1.3 V

Low VCEsat minimizes power loss and heat dissipation, improving overall efficiency of the transistor in operation.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and integration into circuit designs, ensuring compatibility with standard mounting configurations.

Maximum Collector-Emitter Voltage: 60 V

With a high VCEO rating, this transistor can handle relatively high voltage levels without breakdown, enhancing its reliability in various applications.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation, making this transistor suitable for high-performance electronic systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP51 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.3 V

Trade Compliance

BSP51 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5365-00-608-0371, 5365006080371

NIIN

006080371

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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