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BSP52T3

Onsemi

BSP52T3 by Onsemi

BSP52T3 by Onsemi is a NPN Darlington transistor with 1A IC, 80V VCE, and hFE of 2000. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150 °C, making it suitable for various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,587 parts In-Stock

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Digiode

USA . 2,165 parts In-Stock

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Anansix

USA . 289 parts In-Stock

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Native Components

USA . 1,705 parts In-Stock

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$1.893

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Northwest PG Solutions

USA . 1,953 parts In-Stock

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$2.082

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AZTECH Wire

Italy . 13,194 parts In-Stock

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$4.820

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One Stop Electronics

USA . 1,332 parts In-Stock

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$32.050

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QUARKTWIN TECHNOLOGY LTD

USA . 28,657 parts In-Stock

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UNI Independent Distributors

Spain . 6,673 parts In-Stock

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Kulean Microsystems

USA . 5,285 parts In-Stock

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Corphita

USA . 2,823 parts In-Stock

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TANS Electronics

Latvia . 2,743 parts In-Stock

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Supply Digital

USA . 1,964 parts In-Stock

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SupplyDigital Components

Austria . 1,691 parts In-Stock

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Problanco Electronics

Mexico . 1,392 parts In-Stock

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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Corohmni

South Africa . 271 parts In-Stock

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Overview

Upgrade your electronic devices with the BSP52T3 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN Darlington transistor is designed for reliability and efficiency. With a maximum power dissipation of 1.25W and a minimum DC current gain of 2000, this transistor delivers superior performance in a compact package. Whether you're building circuits or upgrading existing electronics, the BSP52T3 provides the value, benefits, and advantages you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for greater sensitivity in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in this area.

Maximum Power Dissipation (Abs): 1.25 W

High power dissipation capability allows for reliable operation without overheating.

Maximum Collector-Emitter Voltage: 80 V

With a high collector-emitter voltage, this transistor can handle higher voltages, increasing its versatility.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP52T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP52T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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