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BSP51,115

NXP Semiconductors

BSP51,115 by NXP Semiconductors

NXP Semiconductors' BSP51,115 is a NPN BJT with Darlington configuration for switching applications. It features VCEsat of 1.3V, hFE of 2000, and max IC of 0.5A. With a max operating temp of 150°C and package style as small outline, it's ideal for high-frequency switching circuits in various electronic devices.

Median Price

$0.142

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,723 parts In-Stock

1+ parts

$0.577

100+ parts

$0.298

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$0.232

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2,723

$0.577

$0.298

$0.232

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Chip1Stop

Japan . 530 parts In-Stock

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$1.040

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530

$1.040

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Future Electronics

Canada . 5,000 parts In-Stock

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$0.142

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$0.138

5,000

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$0.142

$0.138

Arrow

USA . 2,000 parts In-Stock

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$0.134

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$0.134

EBV Elektronik

Germany . 2,000 parts In-Stock

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Verical

USA . 530 parts In-Stock

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$0.112

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530

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$0.112

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Distributors (In-Stock)

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Digiode

USA . 2,533 parts In-Stock

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$0.548

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2,533

$0.548

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Chip Stock

USA . 115,000 parts In-Stock

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NAC Semi

USA . 10,000 parts In-Stock

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$0.245

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$0.226

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$0.245

$0.226

Vyrian

USA . 9,652 parts In-Stock

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9,652

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IBS Electronics

USA . 5,000 parts In-Stock

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$0.203

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$0.197

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$0.203

$0.197

Anansix

USA . 2,523 parts In-Stock

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2,523

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LIBRA Elektronik GmbH

Germany . 639 parts In-Stock

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ComSIT Distribution GmbH

Germany . 225 parts In-Stock

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225

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Bristol Electronics

USA . 150 parts In-Stock

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$0.375

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$0.225

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150

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$0.375

$0.225

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Distributors (Availability)

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AZTECH Wire

Italy . 9,652 parts In-Stock

1+ parts

$0.500

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9,652

$0.500

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Corphita

USA . 3,081 parts In-Stock

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$0.519

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3,081

$0.519

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Component Stockers USA

USA . 30,275 parts In-Stock

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$0.520

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$0.120

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$0.180

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30,275

$0.520

$0.120

$0.180

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Andel Nordic

Denmark . 1,474 parts In-Stock

1+ parts

$1.750

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$1.225

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$1.225

1,474

$1.750

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$1.225

$1.225

Perfect Parts

USA . 7,280 parts In-Stock

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7,280

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A-Z Elektronik GmbH

Germany . 5,735 parts In-Stock

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Northwest PG Solutions

USA . 4,176 parts In-Stock

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RC Electronics

USA . 4,000 parts In-Stock

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$0.260

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$0.240

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$0.230

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$0.230

Eastek

USA . 4,000 parts In-Stock

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$0.203

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UNI Independent Distributors

Spain . 3,737 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,825 parts In-Stock

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$0.340

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Supply Digital

USA . 2,508 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Formix International (Excess)

India . 1,820 parts In-Stock

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Native Components

USA . 1,045 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the NXP Semiconductors BSP51,115 small signal bipolar junction transistor. Designed with precision and expertise, this NPN Darlington transistor offers seamless switching capabilities for a wide range of applications. With a maximum VCEsat of 1.3V and a minimum DC current gain of 2000, you can trust in the exceptional quality and efficiency of this transistor. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the BSP51,115 delivers unparalleled value and functionality that will exceed your expectations. Trust NXP Semiconductors for cutting-edge technology that empowers innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for different types of electronic projects.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration along with the built-in diode and resistor enhances the performance of the transistor in switching applications, providing convenience and efficiency.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures reliable and efficient operation in circuit control.

Maximum VCEsat: 1.3 V

With a low maximum VCEsat value, this transistor minimizes power loss and improves overall efficiency in switching operations.

Surface Mount: YES

Being surface mountable makes this transistor easier to integrate into compact electronic designs, saving space and simplifying assembly.

Minimum DC Current Gain (hFE): 2000

A high minimum DC current gain ensures stable and consistent amplification performance, making this transistor reliable in various circuit applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating allows this transistor to handle higher voltage levels, expanding its suitability for a wide range of circuit designs.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency indicates that this transistor is capable of high-frequency operation, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP51,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.3 V

Trade Compliance

BSP51,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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