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BSP52T1

Onsemi

BSP52T1 by Onsemi

BSP52T1 by Onsemi is a NPN Darlington transistor with max. collector-emitter voltage of 80V and max. collector current of 1A. Ideal for switching applications, it has a min DC current gain of 2000, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.

Median Price

$0.450

Lifecycle Status

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17

In-Stock Inventory

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Bristol Electronics

USA . 5,506 parts In-Stock

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$0.450

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$0.225

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$0.090

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$0.068

5,506

$0.450

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$0.068

Digital Electronic Gebert Verwaltungs UG

Germany . 72,000 parts In-Stock

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QIE Inc.

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Electronics Depot

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Manoshevitz Elec. Sales

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A2Z Electronics, Inc.

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Ack Elektronik San.Tic.Ltd.Sti

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EMSNET

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Digiode

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Semi Source

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Prism Electronics

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Authorized Procurement Solutions

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TANS Electronics

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Glotronic Ltd.

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Kulean Microsystems

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Overview

Discover the BSP52T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that provides unmatched performance in switching applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 2000, this NPN Darlington transistor offers reliability and efficiency like no other. Its compact design and surface-mount capability make it perfect for a wide range of electronic projects. Trust in Onsemi's expertise and innovation to bring you cutting-edge technology that delivers value and benefits to your applications. Choose the BSP52T1 for superior performance and quality every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring its durability and reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a wide range of applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for high sensitivity in switching applications, making this transistor suitable for demanding tasks.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Surface Mount: YES

Surface mounting allows for easy and compact integration onto circuit boards, making it suitable for space-constrained designs.

No. of Terminals: 4

Having 4 terminals allows for more precise control and connectivity in circuit designs, enhancing the transistor's performance.

Minimum DC Current Gain (hFE): 2000

A high DC current gain ensures efficient amplification and switching, making this transistor ideal for high-performance applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its performance, ensuring reliability in challenging environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for use in circuits with higher voltages, expanding the range of applications for this transistor.

Maximum Collector Current (IC): 1 A

A high maximum collector current rating allows this transistor to handle higher currents, making it suitable for power switching applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and reliable electrical connections, enhancing the performance and longevity of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP52T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP52T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-579-7675, 5961015797675

NIIN

015797675

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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