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BSP52T3G

Onsemi

BSP52T3G by Onsemi

BSP52T3G by Onsemi is a NPN Darlington transistor with 1A max collector current, 80V max collector-emitter voltage, and 2000 min DC current gain. Ideal for switching applications in small outline packages, it operates up to 150°C with matte tin terminal finish.

Median Price

$0.650

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 45 parts In-Stock

1+ parts

$0.156

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$0.156

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$0.156

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45

$0.156

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$0.156

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Arrow

USA . 4,000 parts In-Stock

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$0.650

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$0.650

Verical

USA . 4,000 parts In-Stock

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$0.650

4,000

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$0.650

Distributors (In-Stock)

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Digiode

USA . 2,284 parts In-Stock

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$0.148

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$0.148

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Nova Conductors

Japan . 53 parts In-Stock

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$0.153

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Chip Stock

USA . 512,522 parts In-Stock

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Cyclops Electronics Ltd

UK . 27,715 parts In-Stock

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Flip Electronics

USA . 8,000 parts In-Stock

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Vyrian

USA . 4,099 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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$0.250

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$0.250

Semi Source

USA . 1,887 parts In-Stock

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VNN

France . 1,034 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 3,020 parts In-Stock

1+ parts

$0.095

100+ parts

$0.093

1k+ parts

$0.092

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3,020

$0.095

$0.093

$0.092

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Ampacity Inc.

Singapore . 4,484 parts In-Stock

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$0.101

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4,484

$0.101

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Corohmni

South Africa . 291 parts In-Stock

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$0.119

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291

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Corphita

USA . 67 parts In-Stock

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$0.140

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67

$0.140

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Continental Prestige Electronics

USA . 6,246 parts In-Stock

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$0.153

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$0.150

6,246

$0.153

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$0.150

Argo Parts USA

USA . 2,308 parts In-Stock

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$0.153

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$0.148

2,308

$0.153

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$0.148

Netroflash

USA . 500 parts In-Stock

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$0.153

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$0.150

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500

$0.153

$0.150

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Advanced Electronics

New Zealand . 45 parts In-Stock

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$0.156

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$0.156

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$0.156

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45

$0.156

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Aztec Data Supply Inc.

USA . 1,581 parts In-Stock

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$1.784

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1,581

$1.784

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QUARKTWIN TECHNOLOGY LTD

USA . 26,945 parts In-Stock

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ChipstoGo Electronic ltd

UK . 24,000 parts In-Stock

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Lixinc

USA . 10,974 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 4,439 parts In-Stock

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iodParts Technologies Inc.

India . 3,695 parts In-Stock

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Problanco Electronics

Mexico . 3,502 parts In-Stock

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SupplyDigital Components

Austria . 2,767 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,384 parts In-Stock

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Kulean Microsystems

USA . 2,306 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,589 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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$17.650

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$17.650

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$17.650

950

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$17.650

$17.650

Lucentia Tech

USA . 950 parts In-Stock

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$17.650

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$17.650

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$17.650

UHIMA Technologies

Türkiye . 891 parts In-Stock

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891

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Perfect Parts

USA . 780 parts In-Stock

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780

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Overview

Boost your electronic designs with the BSP52T3G from Onsemi, a top-quality small signal bipolar junction transistor that offers unparalleled performance and reliability. With a focus on innovation and cutting-edge technology, Onsemi ensures that their products meet the highest industry standards. This versatile NPN Darlington transistor is ideal for switching applications and is surface mountable for easy integration into your projects. Experience the value and benefits of the BSP52T3G, including high power dissipation, exceptional DC current gain, and a wide operating temperature range. Trust Onsemi to deliver superior quality and performance with every product, making the BSP52T3G the perfect choice for your next electronics project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures the transistor is lightweight and durable, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits for amplification and switching applications, making this transistor versatile for different projects.

Configuration: DARLINGTON

Darlington configuration provides high current gain and allows for a small base current to control a much larger collector current, making it ideal for high-power switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can be used to control electronic signals with high efficiency.

Surface Mount: YES

Being surface mount compatible allows for easy and efficient PCB assembly, saving space and simplifying the manufacturing process.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V makes this transistor suitable for applications requiring higher voltage operation.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate levels of current, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BSP52T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSP52T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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