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NSBC115EPDXV6T1G

Onsemi

NSBC115EPDXV6T1G by Onsemi

NSBC115EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for applications requiring low power dissipation in a compact package, such as signal amplification in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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Vyrian

USA . 11,709 parts In-Stock

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11,709

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Digiode

USA . 518 parts In-Stock

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518

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AZTECH Wire

Italy . 54 parts In-Stock

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$21.350

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54

$21.350

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SupplyDigital Components

Austria . 6,587 parts In-Stock

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6,587

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Problanco Electronics

Mexico . 4,993 parts In-Stock

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Kulean Microsystems

USA . 3,204 parts In-Stock

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TANS Electronics

Latvia . 2,759 parts In-Stock

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2,759

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Corphita

USA . 1,411 parts In-Stock

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Corohmni

South Africa . 448 parts In-Stock

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448

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UHIMA Technologies

Türkiye . 128 parts In-Stock

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Overview

Unlock the power of innovative technology with the NSBC115EPDXV6T1G by Onsemi. Known for their superior quality and reliability, Onsemi's small signal bipolar junction transistors are a game-changer in the industry. With applications ranging from amplification to switching circuits, this product offers unmatched value and benefits to customers. Say goodbye to performance issues with its low VCEsat and built-in resistors, while enjoying the convenience of its surface mount design. Experience the difference with Onsemi's cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility as it can be used as both NPN and PNP transistors depending on the circuit requirements.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuits and the built-in resistor simplifies the design process.

Surface Mount: YES

Enables quick and efficient PCB assembly, saving time and effort during manufacturing.

Maximum VCEsat: 0.25 V

Low saturation voltage helps in minimizing power loss and improving the efficiency of the circuit.

Package Shape: RECTANGULAR

Space-saving design that allows for compact placement on the PCB while ensuring proper heat dissipation.

Terminal Form: FLAT

Facilitates easy soldering and connection to the PCB, ensuring reliable electrical connections.

No. of Elements: 2

Dual-element design offers increased functionality and versatility in circuit design.

No. of Terminals: 6

Sufficient terminals for connecting to external components and ensuring proper signal transmission.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels effectively, making it suitable for a variety of low-power applications.

Package Style (Meter): SMALL OUTLINE

Compact package style that saves space on the PCB and facilitates high-density circuit designs.

Minimum DC Current Gain (hFE): 80

Provides high current gain, ensuring signal amplification with minimal distortion in the output.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Sufficient voltage rating for a variety of low-voltage applications, ensuring safe and reliable operation.

Transistor Element Material: SILICON

Silicon-based material offers high performance, reliability, and efficiency in electronic circuits.

Minimum Operating Temperature: -55 °C

Wide temperature range supports operation in extreme cold conditions, enhancing the transistor's versatility.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, making it suitable for low-power and signal amplification applications.

Terminal Position: DUAL

Dual terminal positions facilitate easy and flexible connections in various circuit configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC115EPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BAIS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

NSBC115EPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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