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PUMD12/ZLF

Nexperia

PUMD12/ZLF by Nexperia

PUMD12/ZLF by Nexperia is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 80, VCE of 50V, and IC of 0.1A. This surface-mount transistor has a max operating temp of 150°C and comes in a small outline package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 78,000 parts In-Stock

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Vyrian

USA . 8,285 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Aztec Data Supply Inc.

USA . 3,472 parts In-Stock

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$0.970

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$0.970

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Corohmni

South Africa . 631 parts In-Stock

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$1.236

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631

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Ampacity Inc.

Singapore . 207 parts In-Stock

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$12.050

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207

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AZTECH Wire

Italy . 5,773 parts In-Stock

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$13.396

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Semicontronic

India . 1,617 parts In-Stock

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$25.050

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$24.424

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$24.298

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Continental Prestige Electronics

USA . 4,508 parts In-Stock

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Supply Digital

USA . 2,624 parts In-Stock

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Argo Parts USA

USA . 1,975 parts In-Stock

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Microchip USA

USA . 222 parts In-Stock

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Bastille Electronics

Australia . 29 parts In-Stock

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Overview

Upgrade your electronic projects with the PUMD12/ZLF by Nexperia. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers NPN and PNP configurations with built-in resistors, perfect for switching applications. With a small outline package shape and gull wing terminals, this transistor provides reliability and ease of use in various circuits. Trust in Nexperia's reputation for excellence and elevate your designs with the PUMD12/ZLF, offering superior performance and value to every customer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it easy to handle and suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for versatile usage in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor helps simplify circuit design and saves space on the PCB, making it a convenient option for compact designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off operations.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on PCBs, enhancing the reliability of the overall circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy integration into circuit designs.

Terminal Form: GULL WING

The gull wing terminal form offers secure solder connections, reducing the risk of damage during assembly or operation.

No. of Elements: 2

With two elements in the transistor, it provides additional functionality and flexibility in circuit design.

No. of Terminals: 6

Having 6 terminals allows for more connections and configurations, enabling complex circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 80

The high minimum DC current gain ensures reliable and consistent performance in amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows the transistor to operate in a wide range of environments without overheating.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides a good margin of safety in high voltage applications.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its temperature stability, high conductivity, and reliability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads in various circuit applications.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and easy connection to other components in the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMD12/ZLF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PUMD12/ZLF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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