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PUMD3,165

NXP Semiconductors

PUMD3,165 by NXP Semiconductors

PUMD3,165 by NXP Semiconductors is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistors for switching applications. This transistor has a max collector-emitter voltage of 50V, operates up to 150°C, and comes in a small outline package suitable for surface mount assembly.

Median Price

$0.036

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DigiKey

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$0.095

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$0.062

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$0.047

28,961

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$0.095

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$0.047

Mouser Electronics

USA . 22,861 parts In-Stock

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$0.260

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$0.096

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$0.058

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Arrow

USA . 2,894,771 parts In-Stock

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Verical

USA . 460,000 parts In-Stock

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Avnet

USA . 200,000 parts In-Stock

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Chip1Stop

Japan . 49,920 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Digiode

USA . 1,707 parts In-Stock

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NAC Semi

USA . 250,000 parts In-Stock

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IBS Electronics

USA . 130,000 parts In-Stock

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Chip Stock

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Classic Components Corporation

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Flip Electronics

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TME

Poland . 10,097 parts In-Stock

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Vyrian

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Anansix

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Ampacity Inc.

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AZTECH Wire

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Continental Prestige Electronics

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Argo Parts USA

USA . 1,852 parts In-Stock

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Corphita

USA . 2,390 parts In-Stock

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Corohmni

South Africa . 121 parts In-Stock

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Aztec Data Supply Inc.

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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UNI Independent Distributors

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Supply Digital

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Netroflash

USA . 100 parts In-Stock

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$0.055

Overview

Discover the NXP Semiconductors PUMD3,165 - a high-quality Small Signal Bipolar Junction Transistor that is versatile and reliable for switching applications. With its NPN and PNP polarity options and built-in resistors, this transistor offers exceptional performance in a compact package. Whether you need to control power flow or amplify signals, the PUMD3,165 delivers efficiency and precision. Trust NXP Semiconductors to provide cutting-edge technology that meets your needs - experience the value and benefits of the PUMD3,165 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for various environments.

Polarity or Channel Type: NPN AND PNP

Can be used in both NPN and PNP configurations, providing flexibility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Contains two separate elements with built-in resistors, making it convenient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing optimal performance in such scenarios.

Surface Mount: YES

Suitable for surface mount applications, saving space on the PCB and allowing for efficient assembly.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and integration into circuits.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, the transistor can handle moderate power loads.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures consistent amplification performance.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150°C, suitable for various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50 V, the transistor can handle a range of voltages in switching applications.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1 A allows for handling moderate current loads.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and reliability during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMD3,165 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PUMD3,165 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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