Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 2;
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Small Signal Bipolar Junction Transistors (BJT) PUMD12,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
PUMD12,115 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Copper Bond Wire Revision 26/Jan/2015 Resin Hardener 02/Jul/2013
PCN Assembly/Origin - PUMYYY 14/Jan/2019
PCN Packaging - Mult Dev PKg Chgs 26/Oct/2021 Mult Dev Pkg Retraction 26/Oct/2021
Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.
CEO
Xuezheng Zhang (Wing)
CFO
Stefan Tilger
COO
Achim Kempe
Hamburg
Fabrication
Fab Initiation
1981
Germany
Wafer Capacity
36,000
Manchester (8-inch line)
2017
Australia
Hazelgrove
12,000
Manchester (6-inch line)
1998
22,000
Shanghai Fab
2022
China
Shanghai
Nexperia Newport
UK
Newport
34,000
IRLML6401TRPBF
Infineon Technologies
IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148
Texas Instruments
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
SMBJ18CA
Bourns
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
LM358M
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
LM2931AZ-5.0RPG
LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.
MBR0520L-T1
Won-top Electronics
MBR0520L-T1 by Won-top Electronics is a Schottky rectifier diode with 20V peak reverse voltage and 0.5A output current. It is a single-config, surface-mount diode in a small outline package, suitable for applications requiring high-speed switching and low forward voltage drop. Operating temperature range from -65°C to 125°C makes it ideal for various electronic circuits.
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
2N2222A
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99-7-F
Multicomp Pro
Iskra Semic Capacitors Industry
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; JESD-609 Code: e0; Maximum Non Repetitive Peak Forward Current: 2 A;
Panjit International
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM358N
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
LM358AN
National Semiconductor
BC846B
Rectron
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
2N3906
Micro Electronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906-7-F
Diodes Incorporated
Diodes Inc. MMBT3906-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and max collector-emitter voltage of 40V. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a transition frequency of 250MHz.
MMBT3904
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
Forward International Electronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC817-40
General Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
MMBTA42LT1G
MMBTA42LT1G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its compact rectangular package makes it suitable for surface mount designs requiring a single configuration.
BC847C-13-F
Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.
MMBT3906,215
NXP Semiconductors
NXP Semiconductors' MMBT3906,215 is a PNP BJT transistor with 3 terminals and max. power dissipation of 0.25W. Ideal for switching applications, it has a min. DC current gain of 30 and max. collector-emitter voltage of 40V. Operating temp ranges from -65 to 150°C, with peak reflow temp at 260°C and transition frequency at 250MHz.
2N2907A
SPC TECHNOLOGY/ MULTICOMP
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;
JANTX2N2907AUATR
Microsemi
Small Signal Bipolar Transistors;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .01 A;
SMMBT4403LT1G
SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.
JANTX2N2222AUA
Microchip Technology
JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.
BC817-40W-7
BC817-40W-7 by Diodes Inc. is a NPN BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a 0.2W power dissipation in a small outline package suitable for surface mount technology.
BC847C
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;
MMBT2222ALT1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
MMBT2907A
Shanghai Lunsure Electronic Technology
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Package Shape: RECTANGULAR;
2N2905A
Taitron Components
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .8 A;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NCR321PAS
Nexperia
LED DISPLAY DRIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 6; Package Code: HVSON; Package Shape: SQUARE;
74LV1T08GW
AND GATE; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 5; Package Code: TSSOP; Package Shape: RECTANGULAR;
GAN063-650WSA
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
PMEG060T050ELPE
BUK7V4R2-40H
74AUP1G17GX4
BUFFER; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
PNS40010ER
74LVC1G14GX4
INVERTER; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
PMEG050T150EIPD
BAS21TH
PNE20030EP
PMH260UNE
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
BUK9K13-60RA
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1;
BCP53H
Small Signal Bipolar Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
NXB0104BQ
BUS TRANSCEIVER; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
GAN041-650WSB
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn);
74AVC8T245BQ
BUS TRANSCEIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: RECTANGULAR;
PUSB3BB2DF
NXS0104PW-Q100
BUS TRANSCEIVER; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag); Moisture Sensitivity Level (MSL): 1;
BUK6D22-30E
PUMD3,115
PUMD3,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP types. It has 2 elements with built-in resistor for switching applications. With a max power dissipation of 0.3W, it operates up to 150°C and supports a max collector-emitter voltage of 50V in a small outline package.
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
PUMD2,115
PUMD2,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor for switching applications. With a max power dissipation of 0.3W and max collector-emitter voltage of 50V, it's ideal for compact electronic designs requiring high reliability.
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
PUMD2,125
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;
PUMD2,125 by NXP Semiconductors is a Small Signal BJT with NPN and PNP channels. Features include 0.3W power dissipation, 60 min hFE, and 0.1A max collector current. Ideal for surface mount applications in various electronic circuits requiring high gain transistors.
PUMD3,135
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
PUMD3-QX
PUMD3-QX by Nexperia is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max VCEsat of 0.1V and can handle a max collector-emitter voltage of 50V. This transistor is commonly used for switching applications in various electronic circuits.
PUMD12,115
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
PUMD13,115
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
PUMD3,125
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V; No. of Terminals: 6;
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Minimum DC Current Gain (hFE): 30;
PUMD9,115
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 4.7; JESD-609 Code: e3;
PUMD9,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With max operating temp of 150°C, it has a collector-emitter voltage of 50V and collector current of 0.1A, making it suitable for various electronic circuits.
PUMD3,165
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
PUMD3-QF
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
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