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PUMD13,115

NXP Semiconductors

PUMD13,115 by NXP Semiconductors

PUMD13,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistors for switching applications. With a max collector-emitter voltage of 50V and max operating temp of 150°C, it's ideal for surface mount designs requiring dual terminals.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 19,149 parts In-Stock

1+ parts

$0.082

100+ parts

$0.030

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$0.020

10k+ parts

$0.014

19,149

$0.082

$0.030

$0.020

$0.014

Mouser Electronics

USA . 3,108 parts In-Stock

1+ parts

$0.290

100+ parts

$0.093

1k+ parts

$0.058

10k+ parts

$0.042

3,108

$0.290

$0.093

$0.058

$0.042

Newark

USA . 78 parts In-Stock

1+ parts

$0.368

100+ parts

$0.135

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78

$0.368

$0.135

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RS (Exports)

UK . 30,800 parts In-Stock

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$0.055

30,800

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$0.055

Avnet

USA . 21,000 parts In-Stock

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$0.025

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$0.025

Verical

USA . 19,149 parts In-Stock

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$0.020

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$0.014

19,149

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$0.014

Rochester

USA . 18,000 parts In-Stock

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-

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$0.027

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$0.022

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$0.020

18,000

-

$0.027

$0.022

$0.020

EBV Elektronik

Germany . 9,000 parts In-Stock

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9,000

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Element14

Singapore . 6,635 parts In-Stock

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$6.490

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$4.500

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$4.410

6,635

-

$6.490

$4.500

$4.410

Chip1Stop

Japan . 4,588 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.042

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$0.022

4,588

-

$0.054

$0.042

$0.022

Farnell

UK . 1,910 parts In-Stock

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$0.046

10k+ parts

$0.034

1,910

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$0.046

$0.034

Distributors (In-Stock)

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Digiode

USA . 1,935 parts In-Stock

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$0.009

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$0.009

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Nova Conductors

Japan . 10 parts In-Stock

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$0.059

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10

$0.059

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Bristol Electronics

USA . 2,952 parts In-Stock

1+ parts

$0.113

100+ parts

$0.056

1k+ parts

$0.022

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2,952

$0.113

$0.056

$0.022

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TME

Poland . 1,067 parts In-Stock

1+ parts

$0.200

100+ parts

$0.068

1k+ parts

$0.043

10k+ parts

$0.041

1,067

$0.200

$0.068

$0.043

$0.041

IBS Electronics

USA . 1,095,000 parts In-Stock

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$0.158

1,095,000

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$0.158

NAC Semi

USA . 909,000 parts In-Stock

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$0.189

909,000

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$0.189

Chip Stock

USA . 134,000 parts In-Stock

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Component Sense

UK . 83,570 parts In-Stock

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83,570

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LIBRA Elektronik GmbH

Germany . 69,542 parts In-Stock

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Cyclops Electronics Ltd

UK . 25,941 parts In-Stock

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K-1 Technologies

USA . 11,897 parts In-Stock

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Vyrian

USA . 4,444 parts In-Stock

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Anansix

USA . 2,481 parts In-Stock

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Sensible Micro Corp

USA . 1,000 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 91,134 parts In-Stock

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$0.008

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$0.008

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$0.008

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91,134

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Corphita

USA . 505 parts In-Stock

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$0.008

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505

$0.008

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AZTECH Wire

Italy . 2,720 parts In-Stock

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$0.050

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Aranea Global

USA . 2,000 parts In-Stock

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$0.058

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$0.055

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Argo Parts USA

USA . 4,558 parts In-Stock

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$0.059

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$0.057

4,558

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.060

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$0.060

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350

$0.060

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$0.060

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Aztec Data Supply Inc.

USA . 297 parts In-Stock

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$1.260

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297

$1.260

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Corohmni

South Africa . 462 parts In-Stock

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$1.582

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462

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Perfect Parts

USA . 2,031,120 parts In-Stock

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Eastek

USA . 285,000 parts In-Stock

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GreenTree Electronics

Israel . 270,000 parts In-Stock

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Futuretech Components

Singapore . 15,000 parts In-Stock

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Continental Prestige Electronics

USA . 8,930 parts In-Stock

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$0.072

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$0.049

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UNI Independent Distributors

Spain . 3,127 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 618 parts In-Stock

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Overview

Discover the ultimate solution for your small signal bipolar junction transistor needs with the PUMD13,115 by NXP Semiconductors. This high-quality product offers a compact design with separate NPN and PNP elements, making it ideal for switching applications. With built-in resistors and a maximum collector-emitter voltage of 50V, this transistor provides reliable performance and efficiency. Trust in NXP Semiconductors' reputation for innovation and excellence to deliver value and benefits that exceed expectations. Upgrade your electronic projects today with the PUMD13,115.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and is durable, making the transistor suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile circuit design options.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

This feature makes it easy to mount the transistor on a PCB, saving assembly time and providing a more compact design.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and alignment on the PCB.

Maximum Power Dissipation (Abs): 0.3 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures amplification of the input signal and stable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

The transistor can operate efficiently at high temperatures, increasing its reliability in harsh environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, ensuring safe operation within specified limits.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, providing good performance characteristics for the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate collector current levels, making it suitable for various circuit applications.

Terminal Finish: TIN

Tin coating on terminals enhances electrical conductivity and solderability, ensuring a secure connection.

Terminal Position: DUAL

Dual terminal position allows for easy connection to the circuit, providing flexibility in PCB layout design.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes, ensuring reliable solder joints.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMD13,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PUMD13,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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