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PUMD3-QF

Nexperia

PUMD3-QF by Nexperia

PUMD3-QF by Nexperia is a Small Signal BJT with NPN and PNP types. It features separate elements with built-in resistor, ideal for switching applications. With a max VCEsat of 0.1V, it operates up to 150°C and has a transition frequency of 230MHz.

Median Price

$0.198

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 42,106 parts In-Stock

1+ parts

$0.290

100+ parts

$0.102

1k+ parts

$0.064

10k+ parts

$0.043

42,106

$0.290

$0.102

$0.064

$0.043

Future Electronics

Canada . 20,000 parts In-Stock

1+ parts

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$0.107

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$0.107

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.063

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500

$0.063

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IBS Electronics

USA . 210,000 parts In-Stock

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$0.170

210,000

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$0.170

Chip Stock

USA . 182,000 parts In-Stock

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NAC Semi

USA . 170,000 parts In-Stock

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$0.214

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$0.214

Vyrian

USA . 8,572 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 1,875 parts In-Stock

1+ parts

$0.063

100+ parts

-

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$0.062

1,875

$0.063

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$0.062

Argo Parts USA

USA . 796 parts In-Stock

1+ parts

$0.063

100+ parts

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$0.061

796

$0.063

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$0.061

Ampacity Inc.

Singapore . 8,293 parts In-Stock

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$0.204

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Semicontronic

India . 8,225 parts In-Stock

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$0.204

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$0.199

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$0.198

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8,225

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$0.199

$0.198

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AZTECH Wire

Italy . 5,589 parts In-Stock

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$0.240

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$0.240

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Aztec Data Supply Inc.

USA . 3,238 parts In-Stock

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$0.420

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3,238

$0.420

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Corohmni

South Africa . 264 parts In-Stock

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$1.388

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264

$1.388

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GreenTree Electronics

Israel . 280,000 parts In-Stock

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Eastek

USA . 260,000 parts In-Stock

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$0.029

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$0.029

Futuretech Components

Singapore . 20,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Supply Digital

USA . 2,331 parts In-Stock

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Overview

Discover the pinnacle of quality and performance with the PUMD3-QF by Nexperia. As a leader in small signal bipolar junction transistors, Nexperia delivers unmatched reliability and precision engineering. Ideal for switching applications, this NPN and PNP transistor offers seamless integration with its separate, 2-element design and built-in resistor. With a low VCEsat of 0.1V and high DC current gain, the PUMD3-QF ensures efficient operation and maximum power dissipation of 0.3W. Say goodbye to compromise and hello to excellence with the PUMD3-QF - the ultimate solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, making the transistor reliable in various operating conditions.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for flexibility in circuit design and compatibility with different types of applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies the circuit design and saves space on the PCB by eliminating the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in high-speed switching circuits.

Surface Mount: YES

Enables easy and efficient PCB assembly, making it suitable for automated manufacturing processes.

Maximum VCEsat: 0.1 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on the PCB and reduces wasted space.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and increase heat dissipation capabilities.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for a range of applications without overheating.

Package Style (Meter): SMALL OUTLINE

Compact size and small outline make it suitable for miniaturized electronic devices and space-constrained PCB layouts.

Minimum DC Current Gain (hFE): 30

Consistent and reliable current gain ensures stability and performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance minimizes signal distortion and interference, ensuring clean and accurate switching operation.

Maximum Collector-Emitter Voltage: 50 V

Supports higher voltage applications, providing a wide range of voltage compatibility in circuit designs.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and compatibility with a wide range of electronic components.

Minimum Operating Temperature: -65 °C

Capable of operating in low-temperature environments, making it suitable for a variety of applications in different climates.

Maximum Collector Current (IC): 0.1 A

Handles moderate current levels, suitable for low to medium-power applications without risking damage to the transistor.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and soldering orientation options.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality, performance, and reliability in automotive and electronic applications.

Nominal Transition Frequency (fT): 230 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, suitable for radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PUMD3-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

PUMD3-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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