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NXP3875G,215

Nexperia

NXP3875G,215 by Nexperia

NXP3875G,215 by Nexperia is a NPN BJT transistor with hFE of 200, VCE of 50V, and IC of 0.15A. It is used for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 80MHz.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,853,460 parts In-Stock

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DigiKey Marketplace

USA . 1,853,460 parts In-Stock

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Vyrian

USA . 5,484 parts In-Stock

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AZTECH Wire

Italy . 14,742 parts In-Stock

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Continental Prestige Electronics

USA . 1,853,460 parts In-Stock

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Supply Digital

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Overview

Experience the power and reliability of Nexperia with the NXP3875G,215 Small Signal Bipolar Junction Transistor. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a minimum DC current gain of 200, ensuring top-notch performance. Its compact rectangular package shape and gull wing terminal form make it perfect for surface mount applications. Trust Nexperia's reputation for quality and innovation, and unlock the potential of your designs with the NXP3875G,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching circuits, offering solid performance in a wide range of electronic devices.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and efficient performance in controlling currents.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor for efficient placement in electronic circuits.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections, ensuring reliability and stability in circuit applications.

No. of Terminals: 3

Three terminals provide essential connections for power, signal, and ground, enabling basic functionality in electronic circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and allows for high-density mounting of components in electronic designs.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain provides stable and consistent amplification performance in various circuit applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle a wide range of voltage levels, ensuring reliability and protection in circuits.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation, making it a common choice in electronic devices.

Maximum Collector Current (IC): 0.15 A

With a maximum collector current rating of 0.15 A, this transistor can handle moderate to low power applications effectively.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and secure solder connections, ensuring long-term reliability in circuit applications.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options in electronic circuits, making it versatile for various designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor can withstand peak temperatures during manufacturing processes, ensuring proper solder connections.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance of 260°C allows for reliable and secure solder connections during manufacturing processes.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability in performance, making it a trusted choice for electronic applications.

Nominal Transition Frequency (fT): 80 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation, making it ideal for switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NXP3875G,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NXP3875G,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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