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PZT2222A/ZLF

Nexperia

PZT2222A/ZLF by Nexperia

Nexperia's PZT2222A/ZLF is a NPN BJT transistor with hFE of 75, VCE of 40V, and fT of 300MHz. Ideal for switching applications due to its fast ton of 35ns and toff of 250ns. Features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.

Median Price

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1k+

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Vyrian

USA . 16,616 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 3,834 parts In-Stock

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Ampacity Inc.

Singapore . 925 parts In-Stock

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$36.050

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QUARKTWIN TECHNOLOGY LTD

USA . 9,144 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Argo Parts USA

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Aranea Global

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Supply Digital

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Overview

Upgrade your electronics with the high-quality PZT2222A/ZLF small signal bipolar junction transistor by Nexperia. Designed for switching applications, this NPN transistor offers a reliable and efficient solution for your projects. With a minimum DC current gain of 75 and a maximum collector-emitter voltage of 40V, this transistor ensures optimal performance. Trust Nexperia's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Whether you're a hobbyist or a professional, the PZT2222A/ZLF provides the value, benefits, and advantages you need to take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient amplification of signals in electronic circuits.

Configuration: SINGLE

Single transistor design simplifies circuit layout and reduces overall system complexity.

Transistor Application: SWITCHING

Ideal for high-speed switching applications due to fast turn on/off times.

Surface Mount: YES

Surface mount capability ensures easy integration into modern circuit board designs.

Package Shape: RECTANGULAR

Rectangular shape offers space-saving benefits in compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections for reliable circuit operation.

No. of Terminals: 4

Four terminals provide flexibility in connecting the transistor to external components.

Package Style (Meter): SMALL OUTLINE

Small outline package style allows for efficient use of board space.

Minimum DC Current Gain (hFE): 75

High minimum DC current gain ensures stable and consistent transistor performance.

Maximum Collector-Emitter Voltage: 40 V

Rated for a maximum voltage of 40V, suitable for low to medium power applications.

Transistor Element Material: SILICON

Silicon material ensures high reliability and consistent performance over time.

Maximum Turn On Time (ton): 35 ns

Fast turn on time enables quick response in switching applications.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate power loads.

Maximum Turn Off Time (toff): 250 ns

Slow turn off time allows for controlled switching of the transistor during operation.

Terminal Finish: Tin (Sn)

Tin terminal finish provides corrosion resistance and facilitates soldering.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connection options.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Rated for a maximum time of 30 seconds at peak reflow temperature for soldering purposes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper solder joint formation during assembly.

Nominal Transition Frequency (fT): 300 MHz

High frequency capability makes this transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT2222A/ZLF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PZT2222A/ZLF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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