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PZT2907AT3G

Onsemi

PZT2907AT3G by Onsemi

PZT2907AT3G by Onsemi is a PNP BJT transistor with 60V VCEO, 1.5W power dissipation, and 200MHz fT. Ideal for switching applications, it has a hFE of 50, operates up to 150°C, and features GULL WING terminals in a small outline package.

Median Price

$0.374

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13 parts In-Stock

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$0.105

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$0.046

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13

$0.105

$0.046

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DigiKey

USA . 67,555 parts In-Stock

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$0.680

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$0.268

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$0.183

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$0.138

67,555

$0.680

$0.268

$0.183

$0.138

Newark

USA . 316 parts In-Stock

1+ parts

$0.700

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$0.276

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$0.187

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316

$0.700

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$0.187

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Adafruit Industries

USA . 300 parts In-Stock

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$1.349

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$1.336

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300

$1.349

$1.336

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Verical

USA . 8,000 parts In-Stock

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$0.129

8,000

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$0.129

Future Electronics

Canada . 4,000 parts In-Stock

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$0.157

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$0.157

EBV Elektronik

Germany . 4,000 parts In-Stock

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4,000

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Farnell

UK . 856 parts In-Stock

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$0.360

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$0.158

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$0.142

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$0.360

$0.158

$0.142

Element14

Singapore . 856 parts In-Stock

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-

100+ parts

$0.389

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$0.266

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$0.240

856

-

$0.389

$0.266

$0.240

Distributors (In-Stock)

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Digiode

USA . 271 parts In-Stock

1+ parts

$0.090

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$0.090

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Nova Conductors

Japan . 66 parts In-Stock

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$0.097

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$0.097

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Forefront Electronics and Design

USA . 9 parts In-Stock

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$22.050

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Vyrian

USA . 19,632 parts In-Stock

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NAC Semi

USA . 16,000 parts In-Stock

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$0.318

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$0.318

IBS Electronics

USA . 12,000 parts In-Stock

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$0.220

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Flip Electronics

USA . 8,000 parts In-Stock

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Electro Sonic

Canada . 8,000 parts In-Stock

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$0.127

8,000

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$0.127

LIBRA Elektronik GmbH

Germany . 7,151 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,000 parts In-Stock

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Chip Stock

USA . 3,565 parts In-Stock

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3,565

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Velocity Electronics

USA . 191 parts In-Stock

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Bristol Electronics

USA . 75 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 24,045 parts In-Stock

1+ parts

$0.064

100+ parts

$0.062

1k+ parts

$0.062

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24,045

$0.064

$0.062

$0.062

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Corohmni

South Africa . 307 parts In-Stock

1+ parts

$0.079

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307

$0.079

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Ampacity Inc.

Singapore . 25,642 parts In-Stock

1+ parts

$0.085

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25,642

$0.085

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Corphita

USA . 688 parts In-Stock

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$0.086

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688

$0.086

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Argo Parts USA

USA . 682 parts In-Stock

1+ parts

$0.097

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$0.094

682

$0.097

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$0.094

Continental Prestige Electronics

USA . 723 parts In-Stock

1+ parts

$0.402

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$0.165

1k+ parts

$0.078

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723

$0.402

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$0.078

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$1.349

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$1.336

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$1.282

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300

$1.349

$1.336

$1.282

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Aztec Data Supply Inc.

USA . 2,883 parts In-Stock

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$1.882

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$1.882

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Perfect Parts

USA . 489,780 parts In-Stock

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Eastek

USA . 340,000 parts In-Stock

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GreenTree Electronics

Israel . 328,000 parts In-Stock

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Kepictronics

USA . 18,930 parts In-Stock

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Lixinc

USA . 13,819 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,561 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 4,983 parts In-Stock

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TANS Electronics

Latvia . 4,095 parts In-Stock

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iodParts Technologies Inc.

India . 3,425 parts In-Stock

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Problanco Electronics

Mexico . 1,748 parts In-Stock

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SupplyDigital Components

Austria . 916 parts In-Stock

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916

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Netroflash

USA . 500 parts In-Stock

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$0.095

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$0.092

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$0.090

500

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$0.095

$0.092

$0.090

UHIMA Technologies

Türkiye . 388 parts In-Stock

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388

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Overview

Enhance your electronic designs with the PZT2907AT3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) perfect for switching applications. Manufactured by Onsemi, this PNP transistor offers reliability and efficiency in a compact, surface-mount package. With a minimum DC current gain of 50 and a maximum collector-emitter voltage of 60V, this transistor provides exceptional performance at a maximum power dissipation of 1.5W. Upgrade your projects with the PZT2907AT3G and experience superior functionality and precision like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation, durability, and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch configurations, making them suitable for switching applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and compact PCB layout, saving space and simplifying assembly processes.

Maximum Power Dissipation (Abs): 1.5 W

Can handle relatively high power dissipation, suitable for applications that require higher power switching.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without significant performance degradation, increasing application flexibility.

Maximum Collector-Emitter Voltage: 60 V

Can withstand relatively high collector-emitter voltages, suitable for a wide range of applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT2907AT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

PZT2907AT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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