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PZT2222A,135

NXP Semiconductors

PZT2222A,135 by NXP Semiconductors

NXP Semiconductors' PZT2222A,135 is a NPN BJT transistor with max VCEsat of 1V and hFE of 75. Ideal for switching applications, it has a max IC of 0.6A and operates at up to 150°C. With a package style of small outline, it features a peak reflow temp of 260°C and fT of 300MHz.

Median Price

$0.094

Lifecycle Status

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1k+

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Adafruit Industries

USA . 1,000 parts In-Stock

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$1.668

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$1.584

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$1.584

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$1.668

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Chip1Stop

Japan . 7,805 parts In-Stock

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Verical

USA . 7,155 parts In-Stock

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$0.094

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Future Electronics

Canada . 4,000 parts In-Stock

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Arrow

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Digiode

USA . 515 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Sensible Micro Corp

USA . 84,457 parts In-Stock

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Chip Stock

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NAC Semi

USA . 8,000 parts In-Stock

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$0.091

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TME

Poland . 4,000 parts In-Stock

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Greenchips

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SIE Connect GmbH - GreenChips

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Vyrian

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Anansix

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Amalfi Trading

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Ampacity Inc.

Singapore . 7,843 parts In-Stock

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AZTECH Wire

Italy . 8,517 parts In-Stock

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Continental Prestige Electronics

USA . 1,596 parts In-Stock

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$0.104

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Argo Parts USA

USA . 953 parts In-Stock

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Semicontronic

India . 7,100 parts In-Stock

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$0.117

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Corphita

USA . 3,024 parts In-Stock

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Microchip USA

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Netroflash

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$0.980

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Aztec Data Supply Inc.

USA . 1,986 parts In-Stock

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Advanced Electronics

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Corohmni

South Africa . 979 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Glotronic Ltd.

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UNI Independent Distributors

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Perfect Parts

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Supply Digital

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Overview

Discover the high-quality PZT2222A,135 by NXP Semiconductors, a cutting-edge Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum VCEsat of 1V and a minimum DC current gain of 75, this NPN transistor offers exceptional performance and reliability. Its compact package shape and gull wing terminal form make it ideal for surface mount applications. Trust NXP Semiconductors' expertise in semiconductor technology to deliver a superior product that meets your needs. Upgrade your electronic designs with the PZT2222A,135 and experience unparalleled efficiency and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the transistor, making it a good choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other components in a circuit, increasing versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it a convenient choice for users.

Transistor Application: SWITCHING

Ideal for switching applications, this transistor offers fast response times and efficient operation.

Surface Mount: YES

The surface mount capability allows for easy soldering and integration onto circuit boards, saving time and effort.

Maximum VCEsat: 1 V

With a low saturation voltage, this transistor helps minimize power loss and improves efficiency in circuits.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and mount, enhancing usability in various PCB designs.

Terminal Form: GULL WING

The gull wing terminals provide secure connection points for reliable performance in harsh environments.

No. of Terminals: 4

Having 4 terminals offers flexibility in circuit connections and enables more complex circuit designs.

Maximum Power Dissipation (Abs): 1.15 W

With a high power dissipation rating, this transistor can handle heavy loads without overheating.

Package Style (Meter): SMALL OUTLINE

The compact small outline package saves space on the PCB, ideal for designs with space constraints.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures stable performance in various environments.

Maximum Collector-Base Capacitance: 8 pF

Low capacitance minimizes signal distortion and interference, improving signal quality.

Maximum Collector-Emitter Voltage: 40 V

With a high collector-emitter voltage rating, this transistor can handle high voltage applications.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making it a durable choice for long-term use.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching applications, enhancing overall performance.

Maximum Collector Current (IC): 0.6 A

A high collector current rating allows for handling heavy loads without risk of damage.

Maximum Turn Off Time (toff): 250 ns

The fast turn-off time improves efficiency in switching applications, reducing power consumption.

Terminal Finish: TIN

The terminal finish provides corrosion resistance and ensures long-lasting connections for reliable performance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and connection options.

Case Connection: COLLECTOR

The collector case connection simplifies circuit layout and improves heat dissipation for better performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a short reflow time, this transistor can withstand high-temperature soldering processes without damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable soldering and prevents solder joint failure during manufacturing.

Nominal Transition Frequency (fT): 300 MHz

A high transition frequency allows for fast signal processing and improved overall circuit performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT2222A,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

35 ns

Maximum VCEsat:

1 V

Trade Compliance

PZT2222A,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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