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PZT2907A

Onsemi

PZT2907A by Onsemi

PZT2907A by Onsemi is a PNP BJT transistor with 60V VCEO, 0.8A IC, and 200MHz fT. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high power dissipation of 1.5W in a small outline package. Suitable for surface mount designs requiring a compact rectangular shape with gull wing terminals.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

47

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1k+

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DigiKey

USA . 8,429 parts In-Stock

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$0.300

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$0.113

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$0.074

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$0.053

8,429

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$0.113

$0.074

$0.053

Distributors (In-Stock)

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Nova Conductors

Japan . 66 parts In-Stock

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$0.091

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Freelance Electronics

USA . 400 parts In-Stock

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$0.153

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Digiode

USA . 3,879 parts In-Stock

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Component Electronics Inc.

Canada . 5,000 parts In-Stock

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Ozdisan Elektronik

Türkiye . 1,975 parts In-Stock

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ComSIT USA

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Bristol Electronics

USA . 22,864 parts In-Stock

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Mil-Aero Solutions, Inc.

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Freddi Giovanni

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Anansix

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PC Components Company LLC

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Astute Electronics Inc

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Atlantic Semiconductor

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Semi Source

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Belgium . 670 parts In-Stock

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UK . 276 parts In-Stock

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NexGen Digital

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Corohmni

South Africa . 405 parts In-Stock

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$0.087

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Aranea Global

USA . 1,000 parts In-Stock

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$0.089

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$0.086

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Continental Prestige Electronics

USA . 4,328 parts In-Stock

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Argo Parts USA

USA . 376 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Corphita

USA . 5,693 parts In-Stock

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Semicontronic

India . 5,418 parts In-Stock

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AZTECH Wire

Italy . 10,449 parts In-Stock

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Component Stockers USA

USA . 6,614 parts In-Stock

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$0.130

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$0.070

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Modulus Dynamics

Lithuania . 4,573 parts In-Stock

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$0.535

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$0.514

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$0.492

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Aztec Data Supply Inc.

USA . 2,969 parts In-Stock

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$1.445

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RC Electronics

USA . 73,627 parts In-Stock

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Perfect Parts

USA . 50,650 parts In-Stock

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Kepictronics

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Infinite Electronics LLP (Excess)

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Lixinc

USA . 13,813 parts In-Stock

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Kulean Microsystems

USA . 7,005 parts In-Stock

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TANS Electronics

Latvia . 5,975 parts In-Stock

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SupplyDigital Components

Austria . 5,942 parts In-Stock

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UNI Independent Distributors

Spain . 4,267 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 3,823 parts In-Stock

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Problanco Electronics

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UHIMA Technologies

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Glotronic Ltd.

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Overview

Enhance your electronic projects with the high-quality PZT2907A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and durable small signal bipolar junction transistors like the PZT2907A. With its versatile applications in switching, this PNP transistor offers outstanding performance and efficiency. Its compact design and maximum power dissipation make it an ideal choice for various electronic devices. Trust Onsemi's expertise and choose the PZT2907A for superior results in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

Being a PNP transistor allows for easy integration into circuits and systems where PNP transistors are required, enhancing overall compatibility and functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to implement and troubleshoot in different applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly change from on to off states, making it suitable for applications requiring fast response times.

Surface Mount: YES

The surface mount option enables easy PCB assembly and saves space, ideal for compact electronic devices and applications with limited space.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy mounting and installation in various electronic systems.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and reliable electrical connections, contributing to the overall durability and performance of the transistor.

No. of Terminals: 4

With four terminals, this transistor offers flexibility in circuit connections and configurations, increasing versatility in different applications.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation capability ensures reliable operation under varying load conditions, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact designs and applications with limited board space.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures consistent and reliable amplification of the input signal, providing stable performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for challenging environments and applications with elevated temperatures.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating of 60V allows for reliable operation in circuits with higher voltage requirements, ensuring compatibility with a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent electrical properties and performance, making it a reliable choice for various electronic applications.

Maximum Turn On Time (ton): 45 ns

The fast turn on time of 45ns ensures quick response and switching speed, making this transistor suitable for high-speed applications where rapid switching is required.

Maximum Collector Current (IC): 0.8 A

With a maximum collector current of 0.8A, this transistor can handle moderate current loads, making it suitable for various switching and amplification applications.

Maximum Turn Off Time (toff): 100 ns

The maximum turn off time of 100ns ensures fast switching and response times, allowing for efficient operation in dynamic applications where quick transitions are vital.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and excellent solderability, ensuring robust and reliable electrical connections in various operating conditions.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and layout, allowing for different connection configurations and enhancing versatility in various applications.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies the circuit layout and ensures proper heat dissipation, contributing to the overall reliability and performance of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and assembly during manufacturing processes, guaranteeing high-quality and consistent performance.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for easy and reliable soldering during assembly, ensuring secure connections and stable performance in various applications.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor offers high-frequency performance, making it suitable for applications requiring fast switching and amplification of signals at higher frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT2907A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

PZT2907A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-442-2086, 5961014422086, 5961-01-473-3307, 5961014733307, 5961-01-584-5979, 5961015845979

NIIN

014422086, 014733307, 015845979

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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