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PZT2222AT3G

Onsemi

PZT2222AT3G by Onsemi

PZT2222AT3G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.6A in a small outline package style.

Median Price

$0.349

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.109

100+ parts

$0.104

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$0.104

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50

$0.109

$0.104

$0.104

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Arrow

USA . 6,200 parts In-Stock

1+ parts

$0.574

100+ parts

$0.243

1k+ parts

$0.162

10k+ parts

$0.127

6,200

$0.574

$0.243

$0.162

$0.127

Mouser Electronics

USA . 10,842 parts In-Stock

1+ parts

$0.670

100+ parts

$0.253

1k+ parts

$0.178

10k+ parts

-

10,842

$0.670

$0.253

$0.178

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DigiKey

USA . 5,715 parts In-Stock

1+ parts

$0.720

100+ parts

$0.284

1k+ parts

$0.194

10k+ parts

$0.138

5,715

$0.720

$0.284

$0.194

$0.138

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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$0.203

10k+ parts

$0.158

8,000

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-

$0.203

$0.158

Master Electronics

USA . 8,000 parts In-Stock

1+ parts

-

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$0.173

10k+ parts

$0.134

8,000

-

-

$0.173

$0.134

Chip1Stop

Japan . 7,677 parts In-Stock

1+ parts

-

100+ parts

$0.227

1k+ parts

$0.141

10k+ parts

$0.119

7,677

-

$0.227

$0.141

$0.119

Farnell

UK . 5,700 parts In-Stock

1+ parts

-

100+ parts

$0.349

1k+ parts

$0.152

10k+ parts

$0.138

5,700

-

$0.349

$0.152

$0.138

Element14

Singapore . 5,700 parts In-Stock

1+ parts

-

100+ parts

$0.381

1k+ parts

$0.259

10k+ parts

$0.233

5,700

-

$0.381

$0.259

$0.233

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,866 parts In-Stock

1+ parts

$0.104

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-

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1,866

$0.104

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Nova Conductors

Japan . 300 parts In-Stock

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$0.112

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300

$0.112

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Flip Electronics

USA . 44,000 parts In-Stock

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44,000

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NAC Semi

USA . 8,000 parts In-Stock

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$0.185

8,000

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$0.185

IBS Electronics

USA . 8,000 parts In-Stock

1+ parts

-

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$0.242

10k+ parts

$0.188

8,000

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$0.242

$0.188

Vyrian

USA . 6,221 parts In-Stock

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6,221

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Chip Stock

USA . 4,500 parts In-Stock

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4,500

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M&R Communications

USA . 3,798 parts In-Stock

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3,798

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Cyclops Electronics Ltd

UK . 3,522 parts In-Stock

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3,522

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Prism Electronics

USA . 45 parts In-Stock

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45

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,332 parts In-Stock

1+ parts

$0.093

100+ parts

-

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6,332

$0.093

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Semicontronic

India . 6,185 parts In-Stock

1+ parts

$0.093

100+ parts

$0.091

1k+ parts

$0.090

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6,185

$0.093

$0.091

$0.090

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Corphita

USA . 586 parts In-Stock

1+ parts

$0.098

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586

$0.098

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Corohmni

South Africa . 309 parts In-Stock

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$0.109

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309

$0.109

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.109

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$0.104

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$0.104

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50

$0.109

$0.104

$0.104

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Argo Parts USA

USA . 2,947 parts In-Stock

1+ parts

$0.111

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$0.108

2,947

$0.111

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$0.108

Netroflash

USA . 100 parts In-Stock

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$0.112

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100

$0.112

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Continental Prestige Electronics

USA . 4,564 parts In-Stock

1+ parts

$0.418

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$0.170

1k+ parts

$0.081

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4,564

$0.418

$0.170

$0.081

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Aztec Data Supply Inc.

USA . 2,995 parts In-Stock

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$1.886

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$1.886

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Perfect Parts

USA . 70,725 parts In-Stock

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70,725

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ChipstoGo Electronic ltd

UK . 32,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,011 parts In-Stock

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Kepictronics

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 7,505 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Kulean Microsystems

USA . 5,562 parts In-Stock

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5,562

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TANS Electronics

Latvia . 4,904 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Metaverse IC Inc.

Canada . 1,500 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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SupplyDigital Components

Austria . 840 parts In-Stock

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840

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UHIMA Technologies

Türkiye . 610 parts In-Stock

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610

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Overview

Experience superior performance with the PZT2222AT3G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for various switching applications. Manufactured by industry leader Onsemi, this NPN transistor offers reliability and efficiency in a compact, surface-mount package. With a high DC current gain and low power dissipation, the PZT2222AT3G ensures optimal performance in a wide range of electronic circuits. Trust Onsemi to deliver exceptional value and performance with this versatile transistor solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, offering fast switching speeds and low on-resistance.

Configuration: SINGLE

Simplified design and easy to use in circuits that require a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts and ensures easy integration into existing designs.

Terminal Form: GULL WING

Gull wing terminals make soldering easy and provide excellent mechanical strength for reliable connections.

No. of Terminals: 4

Simplified terminal configuration for straightforward PCB layout and connection.

Maximum Power Dissipation (Abs): 1.5 W

Able to handle high power dissipation, making it suitable for applications that require power switching.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design for efficient use of PCB real estate.

Minimum DC Current Gain (hFE): 40

Ensures reliable amplification and switching performance in various circuit applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications that require medium voltage switching capabilities.

Transistor Element Material: SILICON

Silicon-based transistor offers good performance characteristics and reliability.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching applications.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels, suitable for low to medium power applications.

Maximum Turn Off Time (toff): 285 ns

Quick turn-off time ensures efficient switching operation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: DUAL

Provides flexibility in PCB layout and connection options.

Case Connection: COLLECTOR

Collector connection for efficient current handling and heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Suitable for reflow soldering processes, ensuring proper solder connections during assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast switching speeds and excellent high-frequency performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT2222AT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PZT2222AT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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