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PMBTA06-QVL

Nexperia

PMBTA06-QVL by Nexperia

Nexperia's PMBTA06-QVL is a NPN BJT transistor for switching applications. Features include VCEsat of 0.25V, hFE of 100, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 standards.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

USA . 145,000 parts In-Stock

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Vyrian

USA . 4,569 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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$0.049

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$0.047

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100

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Continental Prestige Electronics

USA . 3,536 parts In-Stock

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$0.050

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Argo Parts USA

USA . 672 parts In-Stock

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672

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Aztec Data Supply Inc.

USA . 2,202 parts In-Stock

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$0.310

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Corohmni

South Africa . 98 parts In-Stock

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$1.838

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98

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AZTECH Wire

Italy . 6,974 parts In-Stock

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$14.928

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Ampacity Inc.

Singapore . 998 parts In-Stock

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$56.050

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QUARKTWIN TECHNOLOGY LTD

USA . 15,917 parts In-Stock

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Supply Digital

USA . 2,570 parts In-Stock

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Overview

Discover the Nexperia PMBTA06-QVL, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Nexperia, known for their superior products, this NPN transistor offers customers reliability and efficiency. With a low VCEsat of 0.25V and a maximum operating temperature of 150°C, this transistor provides excellent performance. Whether you're looking to optimize your electronic devices or enhance your circuit designs, the PMBTA06-QVL delivers the value and benefits you need. Upgrade your projects today with Nexperia's trusted components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and helps in reducing the overall cost of the product.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration makes it easier to manage and integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and space-saving designs.

Maximum VCEsat: 0.25 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on PCBs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure secure connections.

No. of Terminals: 3

With only 3 terminals, it simplifies the circuit design and reduces complexity.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, it can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures reliable and consistent amplification in circuits.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, it can withstand harsh environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides flexibility in circuit design.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance in semiconductor devices.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, it can function effectively in extreme cold environments.

Maximum Collector Current (IC): 0.5 A

Sufficient collector current rating for various switching applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit layout and connections.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the product.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables high-speed switching operations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PMBTA06-QVL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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