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BC807-16-QR

Nexperia

BC807-16-QR by Nexperia

BC807-16-QR by Nexperia is a PNP BJT for switching applications. Features include VCEsat of 0.7V, hFE of 100, and IC of 0.5A. Suitable for small outline packages, with max operating temp of 150°C.

Median Price

$0.020

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 264,000 parts In-Stock

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$0.027

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Verical

USA . 138,000 parts In-Stock

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Arrow

USA . 32,965 parts In-Stock

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$0.012

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TME

Poland . 790 parts In-Stock

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$0.060

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$0.037

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Chip Stock

USA . 105,000 parts In-Stock

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NAC Semi

USA . 48,000 parts In-Stock

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Vyrian

USA . 8,845 parts In-Stock

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Native Components

USA . 338 parts In-Stock

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$1.040

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Northwest PG Solutions

USA . 1,130 parts In-Stock

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$1.144

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AZTECH Wire

Italy . 12,987 parts In-Stock

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$16.670

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QUARKTWIN TECHNOLOGY LTD

USA . 28,611 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Supply Digital

USA . 148 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality BC807-16-QR PNP transistor by Nexperia. Manufactured with precision and expertise, this small signal BJT offers superior performance in switching applications. With a low VCEsat of 0.7V and a minimum hFE of 100, this transistor ensures efficient power dissipation and reliable operation. Ideal for a wide range of electronic projects, this transistor is designed for surface mount applications and guarantees a seamless integration into your designs. Discover the value and benefits that the BC807-16-QR can bring to your next project and elevate your electronics to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability of the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuit designs that require PNP transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such tasks.

Surface Mount: YES

Surface mount compatibility allows for easy and convenient integration onto circuit boards.

Maximum VCEsat: 0.7 V

Low maximum VCEsat value indicates efficient switching performance with minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape enables easy handling and mounting of the transistor in various applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections and ease of soldering onto circuit boards.

No. of Terminals: 3

3 terminals offer simplicity in connection and integration into circuit designs.

Maximum Power Dissipation (Abs): 0.345 W

Low maximum power dissipation ensures efficient operation and prevents overheating of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design in applications with limited size constraints.

Minimum DC Current Gain (hFE): 100

High DC current gain provides amplification and signal processing capabilities in various circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures stable and reliable performance in different environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

Maximum collector-emitter voltage rating of 45 V allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor in various applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for operation in cold environments without performance degradation.

Maximum Collector Current (IC): 0.5 A

Maximum collector current rating of 0.5 A enables the transistor to handle moderate current loads in circuits.

Terminal Position: DUAL

Dual terminal position provides flexibility in connecting external components and ensures secure connections.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the transistor in automotive and electronic applications.

Nominal Transition Frequency (fT): 80 MHz

High nominal transition frequency allows for fast switching and signal processing capabilities in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-16-QR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC807-16-QR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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