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BC857BW-QF

Nexperia

BC857BW-QF by Nexperia

BC857BW-QF by Nexperia is a PNP BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 220, and IC of 0.1A. With a max operating temp of 150°C, it's ideal for small outline packages in automotive electronics.

Median Price

$0.021

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 90,000 parts In-Stock

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Arrow

USA . 10,000 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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$0.040

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Chip Stock

USA . 82,000 parts In-Stock

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VNN

France . 3,449 parts In-Stock

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Vyrian

USA . 3,025 parts In-Stock

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Semicontronic

India . 43,247 parts In-Stock

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$0.018

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$0.017

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Ampacity Inc.

Singapore . 43,225 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Argo Parts USA

USA . 1,458 parts In-Stock

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Continental Prestige Electronics

USA . 1,154 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,045 parts In-Stock

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$1.289

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Corohmni

South Africa . 1,157 parts In-Stock

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$1.479

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AZTECH Wire

Italy . 6,844 parts In-Stock

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Glotronic Ltd.

UK . 72,000 parts In-Stock

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Eastek

USA . 60,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,612 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Supply Digital

USA . 2,469 parts In-Stock

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Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor that delivers exceptional performance? Look no further than the BC857BW-QF by Nexperia. With its PNP polarity, switching capability, and compact package size, this transistor is perfect for a wide range of applications. From consumer electronics to automotive systems, this transistor offers reliability, efficiency, and versatility. Trust Nexperia's reputation for excellence and choose the BC857BW-QF for all your transistor needs. Unlock the power of innovation with this top-of-the-line product!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, which is ideal for portable electronic devices.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, which makes this product suitable for various electronic circuits that require switching functionality.

Maximum VCEsat: 0.6 V

With a low VCEsat of 0.6 V, this transistor is efficient in minimizing power losses during switching operations, making it energy-efficient.

Minimum DC Current Gain (hFE): 220

The high minimum DC current gain ensures that the transistor can amplify small signals effectively, making it reliable in signal processing applications.

Maximum Collector-Emitter Voltage: 45 V

The high VCE maximum rating of 45 V allows for safe operation in circuits with higher voltage levels, increasing the versatility of this transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for small signal switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BW-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC857BW-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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