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RN1102ACT(TPL3)

Toshiba

RN1102ACT(TPL3) by Toshiba

Toshiba's RN1102ACT(TPL3) is a NPN BJT transistor with 0.1W power dissipation, 50 min hFE, and 0.08A max IC. Ideal for small signal applications in surface mount designs due to its silicon element material.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 5,181 parts In-Stock

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Nova Conductors

Japan . 61 parts In-Stock

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AZTECH Wire

Italy . 726 parts In-Stock

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$11.911

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726

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Ampacity Inc.

Singapore . 674 parts In-Stock

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$32.050

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674

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Aranea Global

USA . 500 parts In-Stock

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Overview

Unleash the power of innovation with the RN1102ACT(TPL3) by Toshiba, a top-tier manufacturer known for producing cutting-edge electronic components. This NPN Small Signal Bipolar Junction Transistor offers unmatched performance and reliability, making it ideal for a wide range of applications. From amplifying signals to switching circuits, this transistor delivers exceptional quality and precision. Experience the value and benefits that only Toshiba can provide with the RN1102ACT(TPL3), your key to unlocking endless possibilities in electronics.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in various applications.

Surface Mount: YES

Surface mount technology allows for easy and compact installation on PCBs, saving space and making assembly more efficient.

Maximum Power Dissipation (Abs): 0.1 W

With a maximum power dissipation of 0.1 W, this transistor can handle moderate power levels without overheating, providing reliability in operation.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures the transistor can provide the necessary amplification in circuits, enhancing signal strength and accuracy.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a common choice for various electronic applications.

Maximum Collector Current (IC): 0.08 A

With a maximum collector current of 0.08 A, this transistor can handle moderate current levels, making it suitable for low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) RN1102ACT(TPL3) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

50

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

RN1102ACT(TPL3) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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