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BCR135F-E6327

Infineon Technologies

BCR135F-E6327 by Infineon Technologies

Infineon's BCR135F-E6327 is a NPN BJT transistor with 0.1A max collector current, 0.25W power dissipation, and 70 min DC current gain. Ideal for surface mount applications in small signal circuits requiring silicon element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Zilex Electronics Inc.

Canada . 27,000 parts In-Stock

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VNN

France . 6,063 parts In-Stock

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6,063

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Vyrian

USA . 5,944 parts In-Stock

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Digiode

USA . 791 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Modulus Dynamics

Lithuania . 7,522 parts In-Stock

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$1.139

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$1.093

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$1.048

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7,522

$1.139

$1.093

$1.048

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AZTECH Wire

Italy . 613 parts In-Stock

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$7.375

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613

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Semicontronic

India . 275 parts In-Stock

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$14.050

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$13.699

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$13.628

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275

$14.050

$13.699

$13.628

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Ampacity Inc.

Singapore . 1,037 parts In-Stock

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$51.050

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A-Z Elektronik GmbH

Germany . 15,581 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,731 parts In-Stock

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1,731

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Bastille Electronics

Australia . 870 parts In-Stock

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Corphita

USA . 726 parts In-Stock

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Argo Parts USA

USA . 710 parts In-Stock

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Continental Prestige Electronics

USA . 491 parts In-Stock

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Corohmni

South Africa . 101 parts In-Stock

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Overview

Discover the Infineon Technologies BCR135F-E6327, a high-quality NPN small signal bipolar junction transistor that offers reliable performance and efficiency. Manufactured by Infineon Technologies, a trusted leader in semiconductor solutions, this transistor is ideal for a wide range of applications. With a maximum collector current of 0.1 A and a minimum DC current gain of 70, this transistor delivers exceptional power dissipation capabilities. Experience the value and benefits of Infineon Technologies' BCR135F-E6327 for your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in low-power amplification and switching applications, making this product versatile for various electronic circuits.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design, saving space and making it easier to integrate this transistor into modern electronic devices.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power levels, making it suitable for a wide range of applications without getting damaged.

Minimum DC Current Gain (hFE): 70

A high minimum DC current gain of 70 indicates good amplification capabilities, ensuring reliable and stable performance in amplification circuits.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance, low noise, and reliability, making this product a durable choice for electronic applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows this transistor to handle moderate current levels, making it suitable for various low-power switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR135F-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

70

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

BCR135F-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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