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FA4F4M-T1B-A

Renesas Electronics

FA4F4M-T1B-A by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 60;

Median Price

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In-Stock Inventory

< 1k

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AZTECH Wire

Italy . 757 parts In-Stock

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Northwest PG Solutions

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Native Components

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FA4F4M-T1B-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

60

JESD-609 Code:

e6

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Transistor Element Material:

SILICON

Trade Compliance

FA4F4M-T1B-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Renesas Electronics

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