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FA4F3M-T1B-A

Renesas Electronics

FA4F3M-T1B-A by Renesas Electronics

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 697 parts In-Stock

1+ parts

$14.990

100+ parts

-

1k+ parts

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10k+ parts

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697

$14.990

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-

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Northwest PG Solutions

USA . 843 parts In-Stock

1+ parts

$16.489

100+ parts

$14.840

1k+ parts

-

10k+ parts

-

843

$16.489

$14.840

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FA4F3M-T1B-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Renesas Electronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

8

JESD-609 Code:

e6

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Transistor Element Material:

SILICON

Trade Compliance

FA4F3M-T1B-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Renesas Electronics

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