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BCR133F-E6327

Infineon Technologies

BCR133F-E6327 by Infineon Technologies

Infineon's BCR133F-E6327 is a NPN BJT ideal for surface mount applications. With a max power dissipation of 0.25W, min hFE of 30, and max IC of 0.1A, it's suitable for low-power electronic circuits in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 5,860 parts In-Stock

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VNN

France . 4,014 parts In-Stock

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4,014

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 691 parts In-Stock

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691

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Corohmni

South Africa . 29 parts In-Stock

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$0.595

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29

$0.595

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Modulus Dynamics

Lithuania . 10,695 parts In-Stock

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$1.425

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$1.368

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$1.311

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$1.425

$1.368

$1.311

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Aztec Data Supply Inc.

USA . 1,690 parts In-Stock

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$1.660

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$1.660

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AZTECH Wire

Italy . 253 parts In-Stock

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$15.675

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253

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Ampacity Inc.

Singapore . 457 parts In-Stock

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$53.050

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457

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Metaverse IC Inc.

Canada . 96,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,472 parts In-Stock

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A-Z Elektronik GmbH

Germany . 8,126 parts In-Stock

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Alle Elektronik GmbH

Germany . 5,417 parts In-Stock

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Continental Prestige Electronics

USA . 4,590 parts In-Stock

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Argo Parts USA

USA . 369 parts In-Stock

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369

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Corphita

USA . 183 parts In-Stock

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183

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Discover the BCR133F-E6327 by Infineon Technologies, a top-quality NPN Small Signal Bipolar Junction Transistor that offers superior performance and reliability. Ideal for various applications, this surface mount transistor boasts a maximum power dissipation of 0.25W and a minimum DC current gain of 30. Infineon Technologies' reputation for excellence ensures that this product delivers exceptional value and benefits to customers, making it a smart choice for your next project.

Feature Benefit Bullets

Polarity/Channel Type: NPN

NPN transistors are widely used for amplification and switching applications due to their high efficiency and lower cost compared to PNP transistors.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, making this transistor suitable for mass production and compact electronic devices.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels without overheating, ensuring reliable performance in various applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 indicates that the transistor can provide significant amplification of input signals, making it suitable for signal amplification circuits and other high-gain applications.

Transistor Element Material: SILICON

Silicon-based transistors offer good thermal stability, high breakdown voltage, and low noise, making them ideal for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle medium current loads, making it suitable for small signal amplification and switching tasks.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures that the transistor can withstand the soldering process during PCB assembly without damage, making it easy to integrate into manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR133F-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

30

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

BCR133F-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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