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BCR112F-E6327

Infineon Technologies

BCR112F-E6327 by Infineon Technologies

Infineon's BCR112F-E6327 is a NPN BJT transistor with max. power dissipation of 0.25W, min. DC current gain of 20, and max. collector current of 0.1A. Ideal for surface mount applications in electronics requiring small signal amplification and switching capabilities at peak reflow temp of 260°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,097 parts In-Stock

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VNN

France . 1,041 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Digiode

USA . 392 parts In-Stock

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392

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Modulus Dynamics

Lithuania . 23,994 parts In-Stock

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$0.877

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$0.842

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$0.807

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23,994

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AZTECH Wire

Italy . 814 parts In-Stock

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$19.252

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Semicontronic

India . 278 parts In-Stock

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$49.050

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$47.824

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$47.578

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278

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Ampacity Inc.

Singapore . 1,369 parts In-Stock

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$61.050

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 19,818 parts In-Stock

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Continental Prestige Electronics

USA . 6,507 parts In-Stock

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Microchip USA

USA . 4,372 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,612 parts In-Stock

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Argo Parts USA

USA . 1,590 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Corphita

USA . 960 parts In-Stock

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Overview

Unlock the power of innovation with the BCR112F-E6327 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like no other. This NPN transistor offers unmatched reliability and performance, making it ideal for a wide range of applications. From consumer electronics to automotive systems, the BCR112F-E6327 provides exceptional value, efficiency, and precision. Experience the advantages that only Infineon Technologies can offer and take your projects to the next level with this high-quality component.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching circuits, making this product versatile and widely applicable.

Surface Mount: YES

Surface mount technology allows for easy and compact placement on circuit boards, ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 0.25 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 indicates good signal amplification capabilities, making this transistor suitable for signal processing applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low cost, and good thermal stability, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, suitable for various circuit applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures that the transistor can withstand the soldering process during circuit assembly without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR112F-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

BCR112F-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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