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MBRS3100T3G

Onsemi

MBRS3100T3G by Onsemi

MBRS3100T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 100V. It operates b/w -65°C to 175°C, making it suitable for power applications. This single-configured diode comes in a small outline package ideal for surface mount technology.

Median Price

$0.233

Lifecycle Status

Suppliers In-Stock

57

In-Stock Inventory

1k+

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Rochester

USA . 2,207 parts In-Stock

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$0.233

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Mouser Electronics

USA . 10,561 parts In-Stock

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DigiKey

USA . 54,463 parts In-Stock

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$0.439

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EBV Elektronik

Germany . 1,517,500 parts In-Stock

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Verical

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Chip1Stop

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Element14

Singapore . 27,059 parts In-Stock

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Farnell

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Newark

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Master Electronics

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Digiode

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Maritex

Poland . 845 parts In-Stock

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Mobius Materials

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IBS Electronics

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NAC Semi

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Semi Source

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Advanced Electronics

New Zealand . 50 parts In-Stock

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Semicontronic

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Ampacity Inc.

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Corohmni

South Africa . 349 parts In-Stock

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Modulus Dynamics

Lithuania . 21,468 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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Microchip USA

USA . 3,141 parts In-Stock

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Component Stockers USA

USA . 515 parts In-Stock

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iodParts Technologies Inc.

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Overview

Enhance your power applications with the MBRS3100T3G by Onsemi. Manufactured with top-notch quality and expertise, this Schottky rectifier diode offers unparalleled performance and reliability. Its small outline package makes it ideal for surface mount applications, providing convenience and flexibility for your projects. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 100V, this diode is designed to deliver exceptional results. Trust Onsemi's reputation for excellence and choose the MBRS3100T3G for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring reliability in various operating conditions.

Configuration: SINGLE

Single configuration simplifies the design and operation of the diode, making it easy to integrate into different circuits.

Surface Mount: YES

Surface mount capability offers convenience in assembly and allows for space-saving on PCBs.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and alignment of the diode on the circuit board.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing the risk of errors during installation.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space and allows for compact design of electronic devices.

Application: POWER

Suitable for power applications, ensuring efficient energy conversion and distribution.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in demanding environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring secure connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connection and compatibility with various setups.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time reduces the risk of component damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and bonding of the diode to the PCB.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC currents, essential for power applications.

Maximum Forward Voltage (VF): 0.62 V

Low forward voltage drop ensures minimal power loss and high efficiency in electrical circuits.

Maximum Output Current: 3 A

High output current capacity makes this diode suitable for applications requiring significant power handling.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low voltage drop, ideal for high-frequency operations.

Terminal Form: C BEND

C bend terminal form offers secure connection and mechanical stability in the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage capability ensures protection against voltage spikes and transient events.

Maximum Non Repetitive Peak Forward Current: 130 A

High non-repetitive peak forward current allows for handling sudden current surges without damage.

Diode Element Material: SILICON

Silicon material offers high reliability and efficiency in diode operation, suitable for a wide range of applications.

Technical Specifications

Diodes & Rectifiers MBRS3100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.62 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRS3100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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