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MICROFJ-60035-TSV-TR

Onsemi

MICROFJ-60035-TSV-TR by Onsemi

MICROFJ-60035-TSV-TR by Onsemi is a 6.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

Median Price

$76.710

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,141 parts In-Stock

1+ parts

$30.420

100+ parts

$26.394

1k+ parts

-

10k+ parts

$22.726

3,141

$30.420

$26.394

-

$22.726

Chip1Stop

Japan . 2,652 parts In-Stock

1+ parts

$123.000

100+ parts

$57.700

1k+ parts

$38.400

10k+ parts

-

2,652

$123.000

$57.700

$38.400

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,379 parts In-Stock

1+ parts

$39.150

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2,379

$39.150

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Vyrian

USA . 7,942 parts In-Stock

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7,942

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Chip Stock

USA . 7,923 parts In-Stock

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7,923

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Distributors (Availability)

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Corphita

USA . 175 parts In-Stock

1+ parts

$37.089

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175

$37.089

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Corohmni

South Africa . 400 parts In-Stock

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$41.210

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400

$41.210

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Component Stockers USA

USA . 669 parts In-Stock

1+ parts

$99.990

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669

$99.990

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Perfect Parts

USA . 38,685 parts In-Stock

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38,685

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Kulean Microsystems

USA . 8,308 parts In-Stock

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8,308

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SupplyDigital Components

Austria . 7,008 parts In-Stock

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7,008

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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6,000

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Problanco Electronics

Mexico . 5,869 parts In-Stock

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5,869

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Authorized Procurement Solutions

USA . 5,685 parts In-Stock

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5,685

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GreenTree Electronics

Israel . 5,147 parts In-Stock

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5,147

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TANS Electronics

Latvia . 4,113 parts In-Stock

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4,113

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UHIMA Technologies

Türkiye . 438 parts In-Stock

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438

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Overview

Discover the unmatched quality and precision of the MICROFJ-60035-TSV-TR photodiode by Onsemi. As a leader in the industry, Onsemi brings cutting-edge technology to the table, ensuring top-notch performance and reliability. Ideal for a wide range of applications, this avalanche photodiode offers unparalleled sensitivity and responsiveness. Say goodbye to dark currents and hello to crystal-clear results with this square-shaped gem. Elevate your projects with the MICROFJ-60035-TSV-TR and experience the difference today!

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionalities and capabilities, making this product suitable for complex applications requiring high performance.

Size: 6.07 mm

The compact size of 6.07 mm makes this photodiode suitable for applications where space is limited and smaller components are required.

Peak Wavelength (nm): 420

With a peak wavelength of 420 nm, this photodiode is ideal for applications that require sensitivity to specific wavelengths of light in the blue range.

Optoelectronic Type: AVALANCHE PHOTODIODE

An avalanche photodiode type offers high sensitivity and low noise characteristics, making it suitable for applications that require precise detection of low light levels.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows this photodiode to be used in harsh environments where temperature fluctuations may occur.

Minimum Reverse Breakdown Voltage: 24.2 V

The minimum reverse breakdown voltage of 24.2 V ensures reliable operation and protection against voltage spikes, making this photodiode a durable choice.

Shape: SQUARE

The square shape of this photodiode allows for easy integration into electronic circuits and assemblies, making it a versatile choice for various applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures reliable performance even in extreme cold conditions, making this photodiode suitable for a wide range of environments.

Maximum Dark Current: 12000 nA

With a maximum dark current of 12000 nA, this photodiode offers low noise characteristics and high sensitivity to light, making it ideal for precision measurement and detection applications.

Technical Specifications

Photodiodes MICROFJ-60035-TSV-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

12000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

6.07 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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