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MICROFJ-30020-TSV-TR1

Onsemi

MICROFJ-30020-TSV-TR1 by Onsemi

MICROFJ-30020-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in temperature-controlled environments.

Median Price

$51.680

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 413 parts In-Stock

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$51.680

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$44.960

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DigiKey

USA . 88 parts In-Stock

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$55.990

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$46.850

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88

$55.990

$46.850

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Rochester

USA . 4,325 parts In-Stock

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$42.140

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$37.710

10k+ parts

$35.490

4,325

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$42.140

$37.710

$35.490

Distributors (In-Stock)

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Digiode

USA . 498 parts In-Stock

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$40.042

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498

$40.042

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Nova Conductors

Japan . 500 parts In-Stock

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$49.870

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$49.870

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Vyrian

USA . 4,412 parts In-Stock

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Flip Electronics

USA . 1,721 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,437 parts In-Stock

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$37.935

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$37.935

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Corohmni

South Africa . 495 parts In-Stock

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$46.830

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495

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Continental Prestige Electronics

USA . 4,526 parts In-Stock

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$49.870

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$48.873

4,526

$49.870

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$48.873

Ampacity Inc.

Singapore . 1,231 parts In-Stock

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$77.980

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TANS Electronics

Latvia . 7,971 parts In-Stock

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Kulean Microsystems

USA . 7,498 parts In-Stock

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SupplyDigital Components

Austria . 4,678 parts In-Stock

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Argo Parts USA

USA . 3,004 parts In-Stock

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Problanco Electronics

Mexico . 1,902 parts In-Stock

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UHIMA Technologies

Türkiye . 815 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$48.873

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$47.376

10k+ parts

$46.379

100

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$48.873

$47.376

$46.379

Overview

Unlock the potential of your optical sensing applications with the MICROFJ-30020-TSV-TR1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality photodiodes that guarantee precision and reliability. This versatile avalanche photodiode is perfect for a wide range of optoelectronic applications, offering exceptional performance even in challenging environments. With a peak wavelength of 420nm and a compact size of 3.07mm, this photodiode ensures accurate light detection and efficient signal processing. Experience unparalleled value and superior results with the MICROFJ-30020-TSV-TR1 from Onsemi.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance, making this product suitable for high precision applications.

Size: 3.07 mm

The small size of the photodiode enables it to be easily integrated into compact devices without adding bulk, ideal for space-constrained designs.

Peak Wavelength (nm): 420

The peak wavelength sensitivity of 420nm allows for efficient detection of specific wavelengths of light, making this photodiode ideal for targeted applications.

Optoelectronic Type: AVALANCHE PHOTODIODE

The use of avalanche photodiode technology provides high sensitivity and low noise performance, making this product suitable for demanding optical detection tasks.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this photodiode can withstand elevated temperatures, making it reliable for use in harsh environments.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage ensures the photodiode's reliability and protection against potential electrical damage, increasing its longevity.

Shape: SQUARE

The square shape of the photodiode allows for efficient light capture and alignment, enhancing its overall performance and accuracy.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40°C, this photodiode can function effectively in cold environments, broadening its range of applications.

Maximum Dark Current: 720 nA

The low maximum dark current of 720nA ensures minimal noise interference, enabling the photodiode to accurately detect weak optical signals in low-light conditions.

Technical Specifications

Photodiodes MICROFJ-30020-TSV-TR1 attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

720 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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