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TIED85

Texas Instruments

TIED85 by Texas Instruments

TIED85 by Texas Instruments is an avalanche photodiode with a max operating temp of 125°C and min of -60°C. It has a max dark current of 0.03nA, reverse voltage of 120V, and is made of silicon. Ideal for optoelectronic applications requiring precise light detection in extreme temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,592 parts In-Stock

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Digiode

USA . 2,397 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 995 parts In-Stock

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$0.652

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$1.711

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995

$0.652

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$1.711

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DigiPath Technology Company

USA . 2,287 parts In-Stock

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$0.718

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$0.718

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ChromeModa Solutions

Germany . 4,690 parts In-Stock

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$0.733

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$0.601

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4,690

$0.733

$0.601

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IDEA Electronic Components Group

UK . 2,003 parts In-Stock

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$0.733

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$0.660

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$0.733

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One Stop Electronics

USA . 787 parts In-Stock

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$5.100

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787

$5.100

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Semicontronic

India . 756 parts In-Stock

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$13.100

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$12.772

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$12.707

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756

$13.100

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AZTECH Wire

Italy . 257 parts In-Stock

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$15.648

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Ampacity Inc.

Singapore . 1,491 parts In-Stock

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$18.100

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Corphita

USA . 1,538 parts In-Stock

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Corohmni

South Africa . 461 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the TIED85 avalanche photodiode by Texas Instruments. Designed to deliver unparalleled performance in a wide range of optoelectronic applications, this high-quality photodiode offers reliability and precision like no other. From industrial automation to medical imaging, the TIED85 provides exceptional sensitivity and accuracy, making it the perfect choice for your next project. Experience the value and benefits of superior craftsmanship with Texas Instruments' TIED85 avalanche photodiode.

Feature Benefit Bullets

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes are known for their high sensitivity and low noise, making them ideal for applications that require detecting very weak optical signals.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows this photodiode to be used in a wide range of environmental conditions without compromising performance.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures that this photodiode can still function in colder environments, providing versatility in its applications.

Maximum Dark Current: 0.03 nA

The low dark current of 0.03 nA ensures that the photodiode is sensitive enough to detect low light levels accurately, making it suitable for precision measurements.

Maximum Reverse Voltage: 120 V

The high maximum reverse voltage rating of 120 V provides protection against reverse bias conditions, enhancing the reliability and longevity of the photodiode.

Semiconductor Material: Silicon

Silicon is a well-established semiconductor material known for its high quantum efficiency and reliability, making this photodiode a dependable choice for various optical sensing applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure placement of the photodiode onto circuit boards, ensuring stable and reliable connections for seamless integration into electronic systems.

Technical Specifications

Photodiodes TIED85 attributes and parameters. Explore more Photodiodes devices from Texas Instruments

Specs

Maximum Dark Current:

.03 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Maximum Reverse Voltage:

120 V

Semiconductor Material:

Silicon

Sub-Category:

Photo Diodes

Trade Compliance

TIED85 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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