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TIED84

Texas Instruments

TIED84 by Texas Instruments

TIED84 by Texas Instruments is an avalanche photodiode with max operating temp of 125°C and min of -60°C. It has a max dark current of 0.15nA, reverse voltage of 120V, made from silicon. Ideal for optoelectronic applications requiring high sensitivity in extreme temperature conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 4,823 parts In-Stock

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Vyrian

USA . 2,384 parts In-Stock

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Parana Technologies

USA . 901 parts In-Stock

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$0.052

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$1.430

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901

$0.052

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$1.430

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DigiPath Technology Company

USA . 299 parts In-Stock

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$0.057

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$0.052

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299

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ChromeModa Solutions

Germany . 6,398 parts In-Stock

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$0.058

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$0.048

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IDEA Electronic Components Group

UK . 776 parts In-Stock

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$0.058

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$0.052

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776

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Ampacity Inc.

Singapore . 1,615 parts In-Stock

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$7.100

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$7.100

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Semicontronic

India . 1,602 parts In-Stock

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$7.100

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$6.922

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$6.887

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One Stop Electronics

USA . 844 parts In-Stock

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$12.100

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AZTECH Wire

Italy . 264 parts In-Stock

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$16.246

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Corphita

USA . 4,218 parts In-Stock

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Corohmni

South Africa . 480 parts In-Stock

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Overview

Experience unmatched quality and reliability with the TIED84 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments offers top-notch photodiodes that are perfect for a wide range of applications. From avalanche photodetectors to through-hole mounting features, this product provides exceptional performance in varying temperatures and conditions. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations, providing you with the value and benefits you deserve. Elevate your projects with the TIED84 and see the difference for yourself.

Feature Benefit Bullets

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes are highly sensitive detectors that offer high quantum efficiency, making them ideal for low-light applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this photodiode can withstand elevated temperatures without losing performance, ensuring reliability in various environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature allows the photodiode to function efficiently even in extremely cold conditions, making it versatile for a wide range of applications.

Maximum Dark Current: 0.15 nA

The low dark current of 0.15 nA minimizes the noise level in the detector, enhancing its sensitivity and precision in detecting low-level optical signals.

Maximum Reverse Voltage: 120 V

The high reverse voltage rating of 120 V provides protection against reverse bias conditions and ensures the photodiode's durability and longevity in operation.

Semiconductor Material: Silicon

Silicon photodiodes offer a broad spectral response range and high sensitivity to visible light, making them suitable for a wide range of applications in industries such as telecommunications, medical devices, and scientific research.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation and connection of the photodiode onto PCBs or other electronic circuits, ensuring secure and stable placement for reliable performance.

Technical Specifications

Photodiodes TIED84 attributes and parameters. Explore more Photodiodes devices from Texas Instruments

Specs

Maximum Dark Current:

.15 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Maximum Reverse Voltage:

120 V

Semiconductor Material:

Silicon

Sub-Category:

Photo Diodes

Trade Compliance

TIED84 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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