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MICROFR-10035-MLP-TA

Onsemi

MICROFR-10035-MLP-TA by Onsemi

MICROFR-10035-MLP-TA by Onsemi is a single avalanche photodiode with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.25V, and max dark current of 81nA. Ideal for surface mount applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,031 parts In-Stock

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Digiode

USA . 157 parts In-Stock

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TANS Electronics

Latvia . 8,226 parts In-Stock

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SupplyDigital Components

Austria . 7,226 parts In-Stock

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Kulean Microsystems

USA . 5,179 parts In-Stock

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Problanco Electronics

Mexico . 3,587 parts In-Stock

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Corphita

USA . 2,499 parts In-Stock

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Corohmni

South Africa . 341 parts In-Stock

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UHIMA Technologies

Türkiye . 70 parts In-Stock

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Overview

Unlock the power of light with the MICROFR-10035-MLP-TA by Onsemi. Crafted with precision and expertise, this avalanche photodiode offers unrivaled quality and performance in the field of optoelectronics. Ideal for applications requiring accurate detection and measurement of light, this photodiode stands out for its reliability and sensitivity. Whether used in medical equipment, industrial sensors, or communication devices, this product delivers exceptional value and efficiency to customers seeking superior results. Trust Onsemi to illuminate your projects with cutting-edge technology and innovation.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy integration and simplifies the setup process.

Size: 1 mm

Compact size enables this photodiode to be used in small devices or tight spaces.

Peak Wavelength (nm): 635

Peak wavelength of 635 nm makes this photodiode suitable for applications requiring detection in the red spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode technology provides high sensitivity and low noise, making it ideal for low-light applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows this photodiode to be used in a wide range of environments without compromising performance.

Minimum Reverse Breakdown Voltage: 24.25 V

High reverse breakdown voltage ensures reliable operation and protection against overvoltage conditions.

Shape: SQUARE

Square shape simplifies mounting and alignment, making it easier to integrate into various systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures this photodiode can perform well even in harsh environments or cold conditions.

Maximum Dark Current: 81 nA

Low dark current minimizes noise and improves signal-to-noise ratio, making this photodiode suitable for high-precision measurements.

Packing Method: TAPE

Tape packing method provides convenience in handling and storage, especially for automated assembly processes.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and allows for secure attachment to PCBs or other surfaces.

Technical Specifications

Photodiodes MICROFR-10035-MLP-TA attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

81 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TAPE

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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