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TIED83

Texas Instruments

TIED83 by Texas Instruments

TIED83 by Texas Instruments is an avalanche photodiode with max operating temp of 125°C and min of -60°C. It has a max dark current of 0.03nA and max reverse voltage of 120V. Ideal for optoelectronic applications requiring high sensitivity in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,163 parts In-Stock

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Digiode

USA . 4,931 parts In-Stock

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4,931

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,241 parts In-Stock

1+ parts

$0.385

100+ parts

$35.787

1k+ parts

$0.347

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2,241

$0.385

$35.787

$0.347

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DigiPath Technology Company

USA . 298 parts In-Stock

1+ parts

$0.424

100+ parts

$0.390

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298

$0.424

$0.390

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ChromeModa Solutions

Germany . 2,863 parts In-Stock

1+ parts

$0.433

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$0.355

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2,863

$0.433

$0.355

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IDEA Electronic Components Group

UK . 1,984 parts In-Stock

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$0.433

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$0.390

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1,984

$0.433

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$0.390

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Ampacity Inc.

Singapore . 1,219 parts In-Stock

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$1.100

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1,219

$1.100

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Semicontronic

India . 953 parts In-Stock

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$10.100

100+ parts

$9.848

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$9.797

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953

$10.100

$9.848

$9.797

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AZTECH Wire

Italy . 715 parts In-Stock

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$12.033

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715

$12.033

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One Stop Electronics

USA . 750 parts In-Stock

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$20.100

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750

$20.100

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Corphita

USA . 1,242 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Overview

Elevate your optoelectronic projects with the TIED83 by Texas Instruments. Crafted by a trusted manufacturer, this avalanche photodiode offers unparalleled quality and reliability. Ideal for a variety of applications, from industrial automation to medical devices, the TIED83 delivers superior performance in extreme temperatures. Experience peace of mind knowing that this photodiode boasts a low dark current and high reverse voltage, making it a top choice for demanding projects. Trust Texas Instruments to provide you with the cutting-edge technology you need to bring your vision to life. Elevate your projects with the TIED83 today.

Feature Benefit Bullets

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and fast response times, making them an ideal choice for applications requiring high performance and precision.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this photodiode can withstand harsh environments and operate reliably at elevated temperatures.

Minimum Operating Temperature: -60 °C

The wide temperature range allows this photodiode to function in extreme cold conditions, offering versatility in various applications.

Maximum Dark Current: 0.03 nA

The low dark current ensures minimal noise and high signal-to-noise ratio, enabling accurate and efficient detection of low light levels.

Maximum Reverse Voltage: 120 V

With a high reverse voltage rating, this photodiode can handle higher voltages without breakdown, providing added protection and reliability in the circuit.

Semiconductor Material: Silicon

Silicon is a widely-used semiconductor material known for its high efficiency and stability, ensuring optimal performance and durability of the photodiode.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure anchoring of the photodiode on a circuit board, enhancing overall reliability and ease of use.

Technical Specifications

Photodiodes TIED83 attributes and parameters. Explore more Photodiodes devices from Texas Instruments

Specs

Maximum Dark Current:

.03 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Maximum Reverse Voltage:

120 V

Semiconductor Material:

Silicon

Sub-Category:

Photo Diodes

Trade Compliance

TIED83 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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