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TIED55

Texas Instruments

TIED55 by Texas Instruments

TIED55 by Texas Instruments is an avalanche photodiode with a max operating temp of 125°C and min of -60°C. It has a max dark current of 0.03nA and can handle up to 185V reverse voltage. Ideal for optoelectronic applications requiring high sensitivity in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,638 parts In-Stock

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6,638

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Digiode

USA . 600 parts In-Stock

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600

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 493 parts In-Stock

1+ parts

$0.190

100+ parts

-

1k+ parts

$1.516

10k+ parts

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493

$0.190

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$1.516

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DigiPath Technology Company

USA . 1,110 parts In-Stock

1+ parts

$0.210

100+ parts

$0.193

1k+ parts

-

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1,110

$0.210

$0.193

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ChromeModa Solutions

Germany . 5,577 parts In-Stock

1+ parts

$0.214

100+ parts

$0.175

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5,577

$0.214

$0.175

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IDEA Electronic Components Group

UK . 156 parts In-Stock

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$0.214

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$0.193

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156

$0.214

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$0.193

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Semicontronic

India . 223 parts In-Stock

1+ parts

$6.100

100+ parts

$5.948

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$5.917

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223

$6.100

$5.948

$5.917

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Ampacity Inc.

Singapore . 572 parts In-Stock

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$8.100

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572

$8.100

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AZTECH Wire

Italy . 809 parts In-Stock

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$11.416

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809

$11.416

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One Stop Electronics

USA . 181 parts In-Stock

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$12.100

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181

$12.100

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Corphita

USA . 3,533 parts In-Stock

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3,533

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Corohmni

South Africa . 189 parts In-Stock

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189

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Overview

Discover the TIED55 by Texas Instruments, a top-of-the-line avalanche photodiode designed to deliver superior performance and reliability. Manufactured by industry leader Texas Instruments, this photodiode is perfect for a wide range of optoelectronic applications. With a maximum operating temperature of 125°C and a minimum operating temperature of -60°C, this photodiode offers unmatched quality and precision. Experience the benefits of high sensitivity and low dark current with the TIED55, providing customers with exceptional value and performance for their optical sensing needs.

Feature Benefit Bullets

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise, making them suitable for applications where a high signal-to-noise ratio is critical.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable operation in various environments without the risk of overheating.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures that the photodiode can function even in extremely cold conditions, expanding its range of applications.

Maximum Dark Current: 0.03 nA

The low dark current ensures minimal noise and enables accurate detection of low-level light signals.

Maximum Reverse Voltage: 185 V

The high reverse voltage rating provides protection against reverse bias conditions, increasing the reliability and durability of the photodiode.

Semiconductor Material: Silicon

Silicon photodiodes are cost-effective, widely available, and offer excellent performance in visible and near-infrared light detection applications.

Technical Specifications

Photodiodes TIED55 attributes and parameters. Explore more Photodiodes devices from Texas Instruments

Specs

Maximum Dark Current:

.03 nA

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Optoelectronic Type:

Maximum Reverse Voltage:

185 V

Semiconductor Material:

Silicon

Sub-Category:

Photo Diodes

Trade Compliance

TIED55 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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