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TIED80

Texas Instruments

TIED80 by Texas Instruments

TIED80 by Texas Instruments is a photodiode with max operating temp of 125°C, min operating temp of -60°C, and max dark current of 500nA. It has a response time of 15ns and can handle up to 200V reverse voltage. Ideal for light sensing applications due to its silicon semiconductor material and through hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,172 parts In-Stock

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Digiode

USA . 4,923 parts In-Stock

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Semicontronic

India . 1,238 parts In-Stock

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$0.100

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$0.098

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$0.097

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1,238

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Parana Technologies

USA . 477 parts In-Stock

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$0.360

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$1.568

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477

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DigiPath Technology Company

USA . 67 parts In-Stock

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$0.396

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$0.364

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67

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ChromeModa Solutions

Germany . 621 parts In-Stock

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$0.404

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$0.331

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621

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IDEA Electronic Components Group

UK . 337 parts In-Stock

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$0.404

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$0.364

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337

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Ampacity Inc.

Singapore . 871 parts In-Stock

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$12.100

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871

$12.100

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AZTECH Wire

Italy . 768 parts In-Stock

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$12.448

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One Stop Electronics

USA . 1,589 parts In-Stock

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$13.100

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Corphita

USA . 3,304 parts In-Stock

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Corohmni

South Africa . 290 parts In-Stock

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Overview

Experience superior quality and reliability with the TIED80 photodiode by Texas Instruments. Manufactured by a trusted industry leader, this product offers exceptional performance in a wide range of applications. From industrial automation to consumer electronics, the TIED80 delivers precise and efficient light detection. With a maximum operating temperature of 125 °C and a fast response time of 0.000000015 s, this photodiode provides unparalleled value and benefits to customers looking for high-quality sensing solutions. Trust Texas Instruments for cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Maximum Operating Temperature: 125 °C

This photodiode can operate at high temperatures without compromising performance, making it suitable for applications where temperature may vary.

Minimum Operating Temperature: -60 °C

With a wide temperature range, this photodiode can also function in extremely low temperatures, offering versatility in different environmental conditions.

Maximum Dark Current: 500 nA

The low dark current ensures minimal noise levels in the output signal, resulting in more accurate and reliable detection of light levels.

Maximum Response Time: 0.000000015 s

The fast response time allows for quick detection of changes in light intensity, making this photodiode ideal for applications requiring real-time monitoring or high-speed data acquisition.

Maximum Reverse Voltage: 200 V

With a high reverse voltage rating, this photodiode can withstand voltage spikes or reverse bias conditions, ensuring its durability and longevity.

Semiconductor Material: Silicon

Silicon photodiodes offer high sensitivity to a wide range of wavelengths, making them suitable for various applications such as light detection, spectroscopy, and optical communications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the assembly process and provides a secure and stable connection, making installation easier and more reliable.

Technical Specifications

Photodiodes TIED80 attributes and parameters. Explore more Photodiodes devices from Texas Instruments

Specs

Maximum Dark Current:

500 nA

Mounting Feature:

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Maximum Response Time:

.000000015 s

Maximum Reverse Voltage:

200 V

Semiconductor Material:

Silicon

Sub-Category:

Photo Diodes

Trade Compliance

TIED80 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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