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MICROFC-10035-SMT-TR

Onsemi

MICROFC-10035-SMT-TR by Onsemi

MICROFC-10035-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85 °C, has reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for surface mount applications in optoelectronics for high sensitivity light detection.

Median Price

$16.940

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,156 parts In-Stock

1+ parts

$16.940

100+ parts

$13.802

1k+ parts

-

10k+ parts

$12.283

1,156

$16.940

$13.802

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$12.283

Chip1Stop

Japan . 2,900 parts In-Stock

1+ parts

$99.900

100+ parts

$46.800

1k+ parts

$31.100

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-

2,900

$99.900

$46.800

$31.100

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Verical

USA . 9,000 parts In-Stock

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-

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$11.347

9,000

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$11.347

Distributors (In-Stock)

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Digiode

USA . 1,837 parts In-Stock

1+ parts

$25.802

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1,837

$25.802

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Vyrian

USA . 362 parts In-Stock

1+ parts

$27.160

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362

$27.160

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Flip Electronics

USA . 24,000 parts In-Stock

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24,000

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Chip Stock

USA . 7,800 parts In-Stock

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7,800

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

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$20.970

3,000

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$20.970

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 789 parts In-Stock

1+ parts

$24.444

100+ parts

-

1k+ parts

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789

$24.444

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Corohmni

South Africa . 358 parts In-Stock

1+ parts

$27.160

100+ parts

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358

$27.160

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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8,000

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Kulean Microsystems

USA . 7,793 parts In-Stock

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7,793

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TANS Electronics

Latvia . 1,187 parts In-Stock

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1,187

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SupplyDigital Components

Austria . 769 parts In-Stock

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769

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Problanco Electronics

Mexico . 578 parts In-Stock

1+ parts

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578

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UHIMA Technologies

Türkiye . 93 parts In-Stock

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93

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Overview

Discover the cutting-edge MICROFC-10035-SMT-TR by Onsemi, a top-quality avalanche photodiode that promises unmatched performance and reliability. As a leading manufacturer in the industry, Onsemi ensures that this photodiode delivers exceptional results in a wide range of applications. From precision sensing to advanced imaging, this product offers outstanding value, superior benefits, and unbeatable advantages to customers looking for excellence in optoelectronic technology. Experience the difference with the MICROFC-10035-SMT-TR and elevate your projects to new heights.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for precise control and tuning of the photodiode's performance, making it suitable for a wide range of applications.

Size: 1 mm

The small size of 1 mm makes this photodiode suitable for compact devices or applications where space is limited.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm indicates that this photodiode is sensitive to blue light, making it ideal for applications that require detection of blue light wavelengths.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and fast response times, making them a good choice for applications that require high-performance photodetection.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this photodiode can withstand high-temperature environments, making it suitable for industrial or outdoor applications.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage of 24.2 V indicates that this photodiode can handle higher voltages, making it suitable for high-power applications.

Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into devices or systems, providing flexibility in design.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this photodiode can operate in cold environments, making it suitable for a wide range of temperature conditions.

Maximum Dark Current: 49 nA

The low maximum dark current of 49 nA indicates that this photodiode produces minimal noise in low-light conditions, making it suitable for high-precision applications.

Packing Method: TR

The TR packing method ensures that the photodiode is well-protected during shipping and handling, reducing the risk of damage and ensuring reliability.

Semiconductor Material: Silicon

Silicon is a common semiconductor material known for its high efficiency and reliability, making this photodiode a durable and long-lasting choice.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the photodiode on circuit boards, making it suitable for automated manufacturing processes.

Technical Specifications

Photodiodes MICROFC-10035-SMT-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

49 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

1 mm

Trade Compliance

MICROFC-10035-SMT-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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