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MICROFR-10010-MLP-GP

Onsemi

MICROFR-10010-MLP-GP by Onsemi

MICROFR-10010-MLP-GP by Onsemi is a 1mm SQUARE AVALANCHE PHOTODIODE with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a reverse breakdown voltage of 24.25V, and dark current of 6nA. Ideal for surface mount applications in optoelectronics due to its compact size and high sensitivity.

Median Price

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Lifecycle Status

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Digiode

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Problanco Electronics

Mexico . 6,831 parts In-Stock

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Kulean Microsystems

USA . 6,372 parts In-Stock

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TANS Electronics

Latvia . 4,256 parts In-Stock

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SupplyDigital Components

Austria . 4,148 parts In-Stock

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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Corphita

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Corohmni

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Overview

Experience the ultimate in quality and reliability with the MICROFR-10010-MLP-GP Photodiode by Onsemi. Designed for precision and performance, this avalanche photodiode boasts a peak wavelength of 635nm, making it ideal for a wide range of optoelectronic applications. With its square shape and surface mounting feature, this photodiode offers ease of installation and versatility. Trust in Onsemi's reputation for excellence and innovation, and unlock endless possibilities with the MICROFR-10010-MLP-GP Photodiode.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration makes this product easy to use and set up.

Size: 1 mm

The compact size of 1 mm makes this product suitable for applications where space is limited.

Peak Wavelength (nm): 635

The peak wavelength of 635 nm makes this photodiode ideal for use in applications requiring precise detection at this specific wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Being an avalanche photodiode, this product offers high sensitivity and low noise, making it suitable for low light level detection applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this photodiode can withstand higher temperatures, increasing its versatility.

Minimum Reverse Breakdown Voltage: 24.25 V

The high minimum reverse breakdown voltage of 24.25 V ensures reliable and stable performance of this photodiode under varying conditions.

Shape: SQUARE

The square shape of this photodiode allows for easy integration into square or rectangular optical systems.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this photodiode can operate in extremely cold environments without any issues.

Maximum Dark Current: 6 nA

The low maximum dark current of 6 nA ensures minimal noise in the output signal, making this photodiode suitable for high precision applications.

Packing Method: GEL PACK

The gel pack packing method provides protection and ensures the safety of the photodiode during transit and storage.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and allows for easy integration into various electronic systems.

Technical Specifications

Photodiodes MICROFR-10010-MLP-GP attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

6 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

GEL PACK

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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