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MICROFR-10035-MLP-TR

Onsemi

MICROFR-10035-MLP-TR by Onsemi

MICROFR-10035-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 81nA. This square-shaped photodiode in a surface mount package is ideal for optoelectronic applications requiring precise light detection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,072 parts In-Stock

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Digiode

USA . 1,635 parts In-Stock

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SupplyDigital Components

Austria . 7,808 parts In-Stock

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Kulean Microsystems

USA . 7,805 parts In-Stock

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Problanco Electronics

Mexico . 7,188 parts In-Stock

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TANS Electronics

Latvia . 2,881 parts In-Stock

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Corphita

USA . 1,249 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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UHIMA Technologies

Türkiye . 31 parts In-Stock

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Overview

Unlock a world of possibilities with the MICROFR-10035-MLP-TR by Onsemi. Crafted with precision and expertise, this photodiode offers unparalleled quality and reliability. Ideal for a variety of applications, this avalanche photodiode provides exceptional performance in a compact 1mm square shape. With a peak wavelength of 635nm and a minimum reverse breakdown voltage of 24.25V, this product delivers superior results in challenging environments. Experience the value and benefits of Onsemi's innovative technology, setting new standards in optoelectronics. Elevate your projects with the MICROFR-10035-MLP-TR and see the difference for yourself.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies setup and reduces complexity in applications.

Size: 1 mm

Small size allows for easy integration in compact devices or tight spaces.

Peak Wavelength (nm): 635

Peak wavelength of 635nm is ideal for applications requiring sensitivity in the red spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes provide high sensitivity and low noise performance, making them suitable for low-light applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C ensures reliable performance in a variety of environments.

Minimum Reverse Breakdown Voltage: 24.25 V

High minimum reverse breakdown voltage of 24.25V ensures protection against voltage spikes and overloads.

Shape: SQUARE

Square shape allows for easy alignment and mounting in applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C allows for use in cold environments without compromising performance.

Maximum Dark Current: 81 nA

Low maximum dark current of 81nA ensures minimal noise and high signal-to-noise ratio in low-light conditions.

Packing Method: TR

TR packing method provides protection during shipping and handling, ensuring product arrives in optimal condition.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies installation and allows for secure mounting on PCBs or other surfaces.

Technical Specifications

Photodiodes MICROFR-10035-MLP-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

81 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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