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MICROFJ-SMA-60035-GEVB-PK

Onsemi

MICROFJ-SMA-60035-GEVB-PK by Onsemi

MICROFJ-SMA-60035-GEVB-PK by Onsemi is a 6.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, with a min reverse breakdown voltage of 24.2V and max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.

Median Price

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Lifecycle Status

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Vyrian

USA . 2,280 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 4,857 parts In-Stock

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Kulean Microsystems

USA . 3,390 parts In-Stock

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Problanco Electronics

Mexico . 2,819 parts In-Stock

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SupplyDigital Components

Austria . 1,583 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 893 parts In-Stock

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Corohmni

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Overview

Unleash the power of light with the MICROFJ-SMA-60035-GEVB-PK by Onsemi. As a leader in photodiode technology, Onsemi delivers top-notch quality and reliability for all your optoelectronic needs. Whether you're working on laser rangefinders, fiber optic communications, or medical instruments, this avalanche photodiode is the perfect solution. With a peak wavelength of 420nm and a compact size of 6.07mm, this photodiode offers unparalleled sensitivity and accuracy. Trust Onsemi to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance, making this photodiode suitable for complex applications.

Size: 6.07 mm

The compact size of this photodiode makes it easy to integrate into various systems without taking up much space.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm makes this photodiode ideal for applications that require sensitivity in the blue light spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

The avalanche photodiode type offers high sensitivity and fast response times, making it suitable for applications that require detection of low light levels.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this photodiode can withstand high temperature environments, increasing its durability and reliability.

Minimum Reverse Breakdown Voltage: 24.2 V

The high reverse breakdown voltage of 24.2 V ensures the photodiode can handle high voltages, making it suitable for applications with varying voltage requirements.

Shape: SQUARE

The square shape of this photodiode allows for easy mounting and alignment, simplifying the integration process.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this photodiode can operate in extreme cold conditions, expanding its range of potential applications.

Maximum Dark Current: 12000 nA

The low maximum dark current of 12000 nA ensures minimal noise in the output signal, making this photodiode suitable for high precision applications.

Technical Specifications

Photodiodes MICROFJ-SMA-60035-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

12000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

6.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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