Loading...

MICROFC-10020-SMT-TR

Onsemi

MICROFC-10020-SMT-TR by Onsemi

MICROFC-10020-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 16nA. Ideal for surface mount applications in optoelectronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,000

-

-

-

-

Vyrian

USA . 4,662 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,662

-

-

-

-

Digiode

USA . 922 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

922

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

SPM Sales

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 863 parts In-Stock

1+ parts

$15.770

100+ parts

-

1k+ parts

-

10k+ parts

-

863

$15.770

-

-

-

Ampacity Inc.

Singapore . 11,956 parts In-Stock

1+ parts

$20.100

100+ parts

-

1k+ parts

-

10k+ parts

-

11,956

$20.100

-

-

-

Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

TANS Electronics

Latvia . 3,957 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,957

-

-

-

-

Kulean Microsystems

USA . 2,791 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,791

-

-

-

-

Corphita

USA . 2,072 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,072

-

-

-

-

Problanco Electronics

Mexico . 1,419 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,419

-

-

-

-

UHIMA Technologies

Türkiye . 602 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

602

-

-

-

-

Corohmni

South Africa . 353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

353

-

-

-

-

SupplyDigital Components

Austria . 153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

153

-

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Discover the unparalleled quality and reliability of the MICROFC-10020-SMT-TR by Onsemi. As a leading manufacturer in the industry, Onsemi's photodiodes boast top-notch performance and precision. Ideal for a wide range of applications, this avalanche photodiode offers exceptional value with its compact size, efficient design, and impressive peak wavelength of 420nm. Whether you're working on medical equipment, industrial automation, or security systems, this product provides unmatched benefits and advantages to help you achieve your goals with ease. Elevate your projects with the MICROFC-10020-SMT-TR and experience excellence like never before.

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced and precise applications, making this product suitable for sophisticated optoelectronic systems.

Size: 1 mm

The small size enables this photodiode to be integrated into compact devices or systems where space is limited.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm makes this photodiode ideal for applications that require sensitivity in the blue-violet spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise characteristics, making them suitable for applications requiring high performance in low light conditions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this photodiode can withstand elevated temperatures, increasing its versatility in various environments.

Minimum Reverse Breakdown Voltage: 24.2 V

The high minimum reverse breakdown voltage ensures the safe operation and reliability of this photodiode in demanding applications.

Shape: RECTANGULAR

The rectangular shape allows for easy integration and alignment within systems, enhancing the photodiode's usability in different configurations.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the photodiode's functionality in cold environments or during temperature fluctuations.

Maximum Dark Current: 16 nA

The low maximum dark current of 16 nA indicates minimal leakage current, resulting in accurate and reliable photodetection in low light conditions.

Packing Method: TR

The TR packing method provides protection during transportation and storage, ensuring that the photodiode arrives in optimal condition for use.

Semiconductor Material: Silicon

Silicon is a common and reliable semiconductor material known for its stability, making this photodiode suitable for long-term operation in various applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and allows for secure attachment to circuit boards or other surfaces, facilitating integration into electronic systems.

Technical Specifications

Photodiodes MICROFC-10020-SMT-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

16 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

1 mm

Trade Compliance

MICROFC-10020-SMT-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20