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MICROFJ-SMTPA-60035-GEVB-PK

Onsemi

MICROFJ-SMTPA-60035-GEVB-PK by Onsemi

MICROFJ-SMTPA-60035-GEVB-PK by Onsemi is a 6.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 12000nA. Ideal for applications requiring high sensitivity in optoelectronics and photonics.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 7,579 parts In-Stock

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SupplyDigital Components

Austria . 7,207 parts In-Stock

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Kulean Microsystems

USA . 5,692 parts In-Stock

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Corphita

USA . 1,937 parts In-Stock

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TANS Electronics

Latvia . 648 parts In-Stock

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Corohmni

South Africa . 276 parts In-Stock

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UHIMA Technologies

Türkiye . 274 parts In-Stock

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Overview

Unlock the power of photon detection with the MICROFJ-SMTPA-60035-GEVB-PK by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unmatched quality and reliability in their photodiode products. The avalanche photodiode configuration offers superior sensitivity and performance in a compact 6.07mm square shape. Ideal for applications in telecommunications, medical imaging, and industrial automation, this photodiode operates flawlessly in temperatures ranging from -40 °C to 85°C. Experience the value and benefits of precise light detection with the MICROFJ-SMTPA-60035-GEVB-PK today!

Feature Benefit Bullets

Configuration: COMPLEX

The complex configuration allows for advanced features and functionalities, making this photodiode suitable for versatile applications.

Size: 6.07 mm

The compact size ensures easy integration into various systems without taking up much space.

Peak Wavelength (nm): 420

The peak wavelength of 420nm indicates high sensitivity to specific light wavelengths, making it ideal for targeted detection and analysis.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high gain, low noise, and fast response times, making this product suitable for low-light applications requiring high sensitivity.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this photodiode can withstand harsh environmental conditions, ensuring reliable performance in various settings.

Minimum Reverse Breakdown Voltage: 24.2 V

The high reverse breakdown voltage provides excellent protection against reverse current, ensuring the reliability and longevity of the photodiode.

Shape: SQUARE

The square shape allows for easy alignment and integration into systems, providing a consistent and streamlined design for optimal performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C enables use in cold environments or applications requiring extended temperature ranges.

Maximum Dark Current: 12000 nA

The low dark current of 12000nA indicates minimal leakage current in the absence of light, ensuring accurate and reliable measurements in low-light conditions.

Technical Specifications

Photodiodes MICROFJ-SMTPA-60035-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

12000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

6.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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