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MICROFJ-SMA-40035-GEVB-PK

Onsemi

MICROFJ-SMA-40035-GEVB-PK by Onsemi

MICROFJ-SMA-40035-GEVB-PK by Onsemi is a 3.93mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 4000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.

Median Price

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Lifecycle Status

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Digiode

USA . 502 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,490 parts In-Stock

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SupplyDigital Components

Austria . 7,199 parts In-Stock

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Problanco Electronics

Mexico . 3,947 parts In-Stock

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Kulean Microsystems

USA . 2,457 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 240 parts In-Stock

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Corohmni

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Overview

Upgrade your optical sensing systems with the MICROFJ-SMA-40035-GEVB-PK from Onsemi. Known for their top-notch quality and reliability, Onsemi's photodiodes offer unmatched performance in a variety of applications. Whether you're working on industrial automation, medical imaging, or security systems, this avalanche photodiode will provide accurate and fast response times. Trust Onsemi to deliver cutting-edge technology that ensures precise measurements and enhanced sensitivity, giving you a competitive edge in your industry.

Feature Benefit Bullets

Size: 3.93 mm

Compact size allows for easy integration into various applications without taking up much space.

Peak Wavelength (nm): 420

Optimal peak wavelength for sensitive detection of light at 420 nm, suitable for specific applications requiring this wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode technology provides high sensitivity and low noise performance, making it ideal for low light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for use in environments with elevated temperatures without compromising performance.

Minimum Reverse Breakdown Voltage: 24.2 V

High reverse breakdown voltage ensures reliable and stable operation of the photodiode, protecting it from damage due to voltage fluctuations.

Shape: SQUARE

Square shape facilitates easy alignment and positioning of the photodiode, making it convenient for various mounting options.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables reliable performance even in sub-zero environments, expanding the range of possible applications.

Maximum Dark Current: 4000 nA

Low dark current minimizes noise and enhances the signal-to-noise ratio, ensuring accurate and precise detection of light signals.

Technical Specifications

Photodiodes MICROFJ-SMA-40035-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

4000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.93 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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