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MICROFJ-SMTPA-30035-GEVBPK

Onsemi

MICROFJ-SMTPA-30035-GEVBPK by Onsemi

MICROFJ-SMTPA-30035-GEVBPK by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 758 parts In-Stock

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Vyrian

USA . 527 parts In-Stock

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527

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TANS Electronics

Latvia . 5,990 parts In-Stock

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5,990

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Kulean Microsystems

USA . 5,799 parts In-Stock

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SupplyDigital Components

Austria . 2,172 parts In-Stock

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Corphita

USA . 698 parts In-Stock

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Corohmni

South Africa . 369 parts In-Stock

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369

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Problanco Electronics

Mexico . 242 parts In-Stock

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Overview

Unlock the power of light with the MICROFJ-SMTPA-30035-GEVBPK by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality photodiodes that are versatile and reliable. From avalanche photodiodes to complex configurations, this product offers unmatched performance and precision. Ideal for a wide range of applications, this photodiode provides exceptional value and benefits to customers looking for high-performance optoelectronic solutions. Trust Onsemi to provide you with the quality and reliability you need for your next project.

Feature Benefit Bullets

Configuration: COMPLEX

Complex configuration allows for versatile use in various applications, providing flexibility and customization.

Size: 3.07 mm

Compact size makes it suitable for space-constrained designs without compromising on performance.

Peak Wavelength (nm): 420

Peak sensitivity at 420nm makes it ideal for applications requiring detection in the blue light spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode offers high sensitivity and fast response times, making it suitable for low-light detection and high-speed applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Minimum Reverse Breakdown Voltage: 24.2 V

High reverse breakdown voltage provides protection against damage from voltage spikes, ensuring longevity and durability.

Shape: SQUARE

Square shape allows for easy integration into existing designs and facilitates alignment for precision applications.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature enables usage in extreme cold environments without sacrificing performance.

Maximum Dark Current: 3000 nA

Low dark current ensures minimal noise and high signal-to-noise ratio, making it suitable for low-light applications requiring high sensitivity.

Technical Specifications

Photodiodes MICROFJ-SMTPA-30035-GEVBPK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

3000 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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