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MICROFR-10050-MLP-TA

Onsemi

MICROFR-10050-MLP-TA by Onsemi

MICROFR-10050-MLP-TA by Onsemi is a 1mm SQUARE AVALANCHE PHOTODIODE with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a reverse breakdown voltage of 24.25V, and dark current of 146nA. Ideal for surface mount applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,765 parts In-Stock

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Vyrian

USA . 1,227 parts In-Stock

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Problanco Electronics

Mexico . 8,339 parts In-Stock

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Kulean Microsystems

USA . 6,824 parts In-Stock

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SupplyDigital Components

Austria . 5,142 parts In-Stock

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TANS Electronics

Latvia . 1,117 parts In-Stock

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UHIMA Technologies

Türkiye . 806 parts In-Stock

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Corphita

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Corohmni

South Africa . 426 parts In-Stock

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Overview

Elevate your optical sensing applications with the MICROFR-10050-MLP-TA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality photodiodes like no other. This avalanche photodiode offers unparalleled performance, reliability, and precision. Whether you're working on industrial automation, medical devices, or security systems, this product will exceed your expectations. Experience the value and benefits of Onsemi's MICROFR-10050-MLP-TA and take your projects to the next level.

Feature Benefit Bullets

Configuration: SINGLE

SINGLE configuration simplifies the setup and makes this product easy to use and integrate into various applications.

Size: 1 mm

Compact size of 1 mm allows for easy placement in small spaces or densely packed circuits.

Peak Wavelength (nm): 635

Peak wavelength of 635 nm makes this photodiode ideal for applications requiring sensitivity in the red spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode type offers high sensitivity and low noise, making it suitable for low-light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature of 85 °C allows for reliable performance in demanding environments.

Minimum Reverse Breakdown Voltage: 24.25 V

High minimum reverse breakdown voltage of 24.25 V ensures stable and safe operation under varying conditions.

Shape: SQUARE

Square shape simplifies the mounting process and provides a uniform sensing area for accurate detection.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature of -40 °C enables this photodiode to function effectively in cold environments.

Maximum Dark Current: 146 nA

Low maximum dark current of 146 nA results in minimal noise and increased signal-to-noise ratio for precise measurements.

Packing Method: TAPE

Tape packing method ensures convenient handling and storage of multiple photodiodes for efficient manufacturing processes.

Mounting Feature: SURFACE MOUNT

Surface mount capability allows for easy and secure attachment to PCBs, saving time and effort during assembly.

Technical Specifications

Photodiodes MICROFR-10050-MLP-TA attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

146 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TAPE

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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