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MICROFJ-SMTPA-30020-GEVB-PK

Onsemi

MICROFJ-SMTPA-30020-GEVB-PK by Onsemi

MICROFJ-SMTPA-30020-GEVB-PK by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 720nA. Ideal for applications requiring high sensitivity in optoelectronic systems.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 1,779 parts In-Stock

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Digiode

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SupplyDigital Components

Austria . 8,355 parts In-Stock

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Problanco Electronics

Mexico . 5,848 parts In-Stock

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TANS Electronics

Latvia . 4,915 parts In-Stock

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Kulean Microsystems

USA . 3,582 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 784 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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Overview

Enhance your optical sensing applications with the MICROFJ-SMTPA-30020-GEVB-PK by Onsemi. As a reputable manufacturer in the industry, Onsemi delivers top-quality photodiodes that offer unrivaled performance and reliability. Whether you're working on telecommunications, medical equipment, or industrial automation, this avalanche photodiode is sure to provide accurate and efficient light detection. Experience the value of precision and consistency with Onsemi's MICROFJ-SMTPA-30020-GEVB-PK, designed to meet your demanding requirements and exceed your expectations.

Feature Benefit Bullets

Configuration: COMPLEX

A complex configuration allows for advanced performance and functionality, making this product suitable for high-level applications.

Size: 3.07 mm

The compact size of this photodiode makes it versatile for various installations and allows for easy integration into different systems.

Peak Wavelength (nm): 420

The peak wavelength of 420 nm indicates high sensitivity to light in this range, making it ideal for specific applications requiring detection at this wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise characteristics, making this product suitable for low-light detection and high-speed applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this photodiode can withstand harsh environments and extended use without compromising performance.

Minimum Reverse Breakdown Voltage: 24.2 V

The high reverse breakdown voltage ensures reliable operation and protection against reverse current, making this photodiode durable and long-lasting.

Shape: SQUARE

The square shape allows for convenient mounting and alignment, simplifying the installation process and ensuring accurate detection.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C enables the photodiode to function effectively in cold environments or during temperature fluctuations.

Maximum Dark Current: 720 nA

The low maximum dark current of 720 nA indicates minimal noise levels and high sensitivity, making this photodiode ideal for low-light applications where accuracy is crucial.

Technical Specifications

Photodiodes MICROFJ-SMTPA-30020-GEVB-PK attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

COMPLEX

Maximum Dark Current:

720 nA

Infrared (IR) Range:

NO

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Shape:

SQUARE

Size:

3.07 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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