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MICROFC-10010-SMT-TR

Onsemi

MICROFC-10010-SMT-TR by Onsemi

MICROFC-10010-SMT-TR by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 to 85 °C, has min reverse breakdown voltage of 24.2V, and max dark current of 3nA. Ideal for surface mount applications in optoelectronics due to its silicon semiconductor material and rectangular shape.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 8,234 parts In-Stock

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Digiode

USA . 1,893 parts In-Stock

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AZTECH Wire

Italy . 673 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 5,574 parts In-Stock

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TANS Electronics

Latvia . 4,799 parts In-Stock

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Kulean Microsystems

USA . 3,129 parts In-Stock

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SupplyDigital Components

Austria . 2,127 parts In-Stock

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UHIMA Technologies

Türkiye . 499 parts In-Stock

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Corphita

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Corohmni

South Africa . 308 parts In-Stock

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Overview

Discover the cutting-edge technology of the MICROFC-10010-SMT-TR by Onsemi, a top-of-the-line avalanche photodiode that sets the standard for quality and reliability. Designed with precision and expertise, this photodiode offers unparalleled performance in various applications. From industrial automation to medical equipment, this product delivers exceptional value, providing customers with unmatched benefits and advantages. Trust Onsemi to deliver superior products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Configuration: COMPLEX

Complex configuration allows for advanced functionality and versatility in various applications.

Size: 1 mm

Compact size enables easy integration into smaller devices or systems.

Peak Wavelength (nm): 420

Peak wavelength of 420nm is ideal for applications requiring high sensitivity in the blue light spectrum.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiode offers high sensitivity and low noise performance, suitable for low light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in a wide range of environments.

Minimum Reverse Breakdown Voltage: 24.2 V

High reverse breakdown voltage ensures protection against voltage surges or spikes.

Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and alignment in systems or devices.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions without loss of performance.

Maximum Dark Current: 3 nA

Low dark current minimizes noise and improves signal-to-noise ratio for accurate measurements.

Packing Method: TR

TR packing method ensures safe and secure transportation of the photodiodes.

Semiconductor Material: Silicon

Silicon semiconductor material offers high sensitivity and efficiency in converting light into electrical signals.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and allows for compact design integration.

Technical Specifications

Photodiodes MICROFC-10010-SMT-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

LOW NOISE

Configuration:

COMPLEX

Maximum Dark Current:

3 nA

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

420

Minimum Reverse Breakdown Voltage:

24.2 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

1 mm

Trade Compliance

MICROFC-10010-SMT-TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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