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MICROFR-10050-MLP-TR

Onsemi

MICROFR-10050-MLP-TR by Onsemi

MICROFR-10050-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.25V, and max dark current of 146nA. Ideal for surface mount applications in optoelectronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,324 parts In-Stock

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Digiode

USA . 2,017 parts In-Stock

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Kulean Microsystems

USA . 5,757 parts In-Stock

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TANS Electronics

Latvia . 4,270 parts In-Stock

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Problanco Electronics

Mexico . 3,840 parts In-Stock

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SupplyDigital Components

Austria . 1,634 parts In-Stock

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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Corphita

USA . 346 parts In-Stock

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Corohmni

South Africa . 193 parts In-Stock

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Overview

Unlock the power of light detection with the MICROFR-10050-MLP-TR by Onsemi. This high-quality photodiode offers unparalleled sensitivity and reliability, making it perfect for a wide range of applications. Whether you're working in industrial automation, medical devices, or consumer electronics, this avalanche photodiode delivers exceptional performance in a compact 1mm square shape. Trust in Onsemi's reputation for excellence and choose the MICROFR-10050-MLP-TR for all your light sensing needs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration is suitable for applications requiring a single photodiode.

Size: 1 mm

Compact size enables easy integration into various devices and systems.

Peak Wavelength (nm): 635

Peak sensitivity at 635 nm makes it ideal for applications requiring detection at this specific wavelength.

Optoelectronic Type: AVALANCHE PHOTODIODE

Avalanche photodiodes offer high sensitivity and low noise, making them ideal for low-light detection applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Minimum Reverse Breakdown Voltage: 24.25 V

High reverse breakdown voltage indicates the photodiode's ability to withstand voltage stress, ensuring durability.

Shape: SQUARE

Square shape provides a uniform detection area, enabling accurate and consistent measurements.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the photodiode can function effectively in cold environments.

Maximum Dark Current: 146 nA

Low dark current results in minimal noise, ideal for applications requiring high signal-to-noise ratios.

Packing Method: TR

TR packing method offers secure protection during transportation and storage, ensuring the photodiode arrives in optimal condition.

Mounting Feature: SURFACE MOUNT

Surface mount option allows for easy and convenient installation onto circuit boards or other surfaces.

Technical Specifications

Photodiodes MICROFR-10050-MLP-TR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Dark Current:

146 nA

Infrared (IR) Range:

NO

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

635

Minimum Reverse Breakdown Voltage:

24.25 V

Shape:

SQUARE

Size:

1 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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