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QSB34CZR

Onsemi

QSB34CZR by Onsemi

The Onsemi QSB34CZR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with reverse breakdown voltage of 32V. Ideal for infrared applications, it has a size of 4.4mm and max dark current of 30nA.

Median Price

$1.140

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 14 parts In-Stock

1+ parts

$0.255

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14

$0.255

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Mouser Electronics

USA . 83 parts In-Stock

1+ parts

$1.140

100+ parts

$0.595

1k+ parts

$0.473

10k+ parts

$0.391

83

$1.140

$0.595

$0.473

$0.391

DigiKey

USA . 1,000 parts In-Stock

1+ parts

$1.180

100+ parts

$0.618

1k+ parts

$0.473

10k+ parts

$0.448

1,000

$1.180

$0.618

$0.473

$0.448

Chip1Stop

Japan . 17 parts In-Stock

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Digiode

USA . 2,862 parts In-Stock

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$0.242

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2,862

$0.242

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IBS Electronics

USA . 12,000 parts In-Stock

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$0.519

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$0.505

12,000

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$0.519

$0.505

NAC Semi

USA . 10,000 parts In-Stock

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$0.740

10k+ parts

$0.673

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$0.740

$0.673

Vyrian

USA . 7,891 parts In-Stock

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Bristol Electronics

USA . 3,044 parts In-Stock

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Nova Conductors

Japan . 71 parts In-Stock

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Semicontronic

India . 245 parts In-Stock

1+ parts

$0.217

100+ parts

$0.212

1k+ parts

$0.210

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245

$0.217

$0.212

$0.210

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Ampacity Inc.

Singapore . 166 parts In-Stock

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$0.217

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Corphita

USA . 1,701 parts In-Stock

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$0.230

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$0.230

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AZTECH Wire

Italy . 797 parts In-Stock

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$0.255

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797

$0.255

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Corohmni

South Africa . 460 parts In-Stock

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$0.255

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460

$0.255

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Aztec Data Supply Inc.

USA . 1,411 parts In-Stock

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$0.630

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$0.630

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Problanco Electronics

Mexico . 7,161 parts In-Stock

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Continental Prestige Electronics

USA . 6,582 parts In-Stock

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TANS Electronics

Latvia . 5,388 parts In-Stock

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SupplyDigital Components

Austria . 4,575 parts In-Stock

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Perfect Parts

USA . 4,321 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,278 parts In-Stock

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Kepictronics

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Argo Parts USA

USA . 1,918 parts In-Stock

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Supply Digital

USA . 1,725 parts In-Stock

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UHIMA Technologies

Türkiye . 878 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Enhance your electronic designs with the exceptional QSB34CZR photodiode by Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient products that meet industry standards. Perfect for applications in sensing, medical devices, and industrial equipment, this PIN photodiode offers precise light detection at a peak wavelength of 940nm. With a maximum operating temperature of 85°C and a minimum reverse breakdown voltage of 32V, this rectangular photodiode is a versatile solution for your optoelectronic needs. Experience the value and benefits of Onsemi's QSB34CZR and take your projects to the next level.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the setup and makes it easy to integrate into various systems.

Size: 4.4 mm

Compact size allows for easy placement and integration into small devices or tight spaces.

Peak Wavelength (nm): 940

Peak wavelength of 940nm makes it suitable for applications requiring sensitivity in the infrared range.

Optoelectronic Type: PIN PHOTODIODE

PIN photodiode design offers high sensitivity and low noise, ideal for applications requiring precise light detection.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance in challenging environments.

Minimum Reverse Breakdown Voltage: 32 V

High reverse breakdown voltage provides protection against electrical surges and overvoltage conditions.

Shape: RECTANGULAR

Rectangular shape facilitates easy installation and alignment in optical systems.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature ensures functionality in cold environments or during temperature fluctuations.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and solderability for reliable connections.

Nominal Light Current: 0.037 mA

Nominal light current provides a baseline for light detection and measurement in various applications.

Maximum Dark Current: 30 nA

Low dark current ensures minimal noise and high signal-to-noise ratio in low-light conditions.

Infrared (IR) Range: YES

Ability to detect and respond to infrared light expands the range of applications for this photodiode.

Maximum Reverse Voltage: 32 V

Maximum reverse voltage rating ensures safe operation and protection against reverse voltage conditions.

Semiconductor Material: Silicon

Silicon semiconductor material offers high sensitivity and durability for long-lasting performance.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and allows for easy integration into circuit boards and devices.

Technical Specifications

Photodiodes QSB34CZR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

DAYLIGHT FILTER

Configuration:

SINGLE

Maximum Dark Current:

30 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.037 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

940

Minimum Reverse Breakdown Voltage:

32 V

Maximum Reverse Voltage:

32 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

4.4 mm

Sub-Category:

Photo Diodes

Terminal Finish:

TIN

Trade Compliance

QSB34CZR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.60.50

SB

8541.40.60.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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