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QSB34ZR

Onsemi

QSB34ZR by Onsemi

The Onsemi QSB34ZR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max reverse voltage of 32V. Ideal for infrared applications, it has a nominal light current of 0.037mA and max dark current of 30nA.

Median Price

$1.140

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3 parts In-Stock

1+ parts

$1.138

100+ parts

$0.594

1k+ parts

$0.412

10k+ parts

$0.363

3

$1.138

$0.594

$0.412

$0.363

Mouser Electronics

USA . 709 parts In-Stock

1+ parts

$1.140

100+ parts

$0.595

1k+ parts

$0.457

10k+ parts

$0.391

709

$1.140

$0.595

$0.457

$0.391

DigiKey

USA . 728 parts In-Stock

1+ parts

$1.180

100+ parts

$0.618

1k+ parts

$0.473

10k+ parts

$0.448

728

$1.180

$0.618

$0.473

$0.448

Flip Electronics (Authorized)

USA . 356,000 parts In-Stock

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356,000

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Chip1Stop

Japan . 3 parts In-Stock

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Digiode

USA . 699 parts In-Stock

1+ parts

$0.071

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699

$0.071

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Vyrian

USA . 842 parts In-Stock

1+ parts

$0.075

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842

$0.075

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Flip Electronics

USA . 356,975 parts In-Stock

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356,975

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Connector Distribution Corp

USA . 600 parts In-Stock

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600

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Right Parts Inc.

USA . 600 parts In-Stock

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600

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Semi Source

USA . 11 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,068 parts In-Stock

1+ parts

$0.068

100+ parts

-

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1,068

$0.068

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Corohmni

South Africa . 52 parts In-Stock

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$0.075

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52

$0.075

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Kepictronics

USA . 13,064 parts In-Stock

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13,064

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A-Z Elektronik GmbH

Germany . 5,973 parts In-Stock

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5,973

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Metaverse IC Inc.

Canada . 4,731 parts In-Stock

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4,731

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Perfect Parts

USA . 2,443 parts In-Stock

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2,443

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TANS Electronics

Latvia . 1,438 parts In-Stock

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Problanco Electronics

Mexico . 1,248 parts In-Stock

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1,248

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SupplyDigital Components

Austria . 1,237 parts In-Stock

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1,237

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UHIMA Technologies

Türkiye . 598 parts In-Stock

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598

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Kulean Microsystems

USA . 513 parts In-Stock

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513

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Supply Digital

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Overview

Experience the cutting-edge technology of the QSB34ZR photodiode by Onsemi, a leading manufacturer known for its high-quality products. This PIN photodiode offers unparalleled sensitivity in the infrared range, making it ideal for applications in remote control systems, light barriers, and optical encoders. With a compact size and reliable performance, this photodiode provides customers with exceptional value and precision for their optoelectronic needs. Discover the difference with Onsemi's QSB34ZR and elevate your projects to the next level.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into various electronics designs without the need for complex circuitry.

Size: 4.4 mm

Compact size allows for flexibility in placement and integration, making it suitable for applications where space is limited.

Peak Wavelength (nm): 940

Peak wavelength of 940nm makes this photodiode ideal for applications requiring sensitivity in the near-infrared spectrum.

Optoelectronic Type: PIN PHOTODIODE

PIN photodiodes offer high-speed response and low noise characteristics, making them suitable for applications requiring fast and accurate light detection.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in demanding environments where temperature fluctuations may occur.

Minimum Reverse Breakdown Voltage: 32 V

High reverse breakdown voltage provides protection against reverse bias conditions, enhancing the durability and longevity of the photodiode.

Shape: RECTANGULAR

Rectangular shape simplifies the design and mounting process, allowing for easy installation in various electronic devices.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature enables the photodiode to function effectively even in cold environments, expanding its versatility.

Terminal Finish: TIN

Tin terminal finish ensures good electrical contact and corrosion resistance, enhancing the reliability and longevity of the photodiode.

Nominal Light Current: 0.037 mA

Nominal light current of 0.037 mA indicates high sensitivity to light, making it suitable for applications where accurate light detection is required.

Maximum Dark Current: 30 nA

Low dark current ensures minimal noise in the output signal, enabling precise detection of light signals even in low light conditions.

Infrared (IR) Range: YES

Inclusion of the infrared range makes this photodiode suitable for applications requiring detection of infrared light, expanding its utility.

Maximum Reverse Voltage: 32 V

High maximum reverse voltage provides overvoltage protection, safeguarding the photodiode from potential damage due to reverse bias conditions.

Semiconductor Material: Silicon

Silicon semiconductor material offers high sensitivity, low noise, and fast response time, making this photodiode ideal for a wide range of light detection applications.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the integration process, allowing for easy and secure mounting on PCBs or other surfaces.

Technical Specifications

Photodiodes QSB34ZR attributes and parameters. Explore more Photodiodes devices from Onsemi

Specs

Additional Features:

DAYLIGHT FILTER

Configuration:

SINGLE

Maximum Dark Current:

30 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.037 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

940

Minimum Reverse Breakdown Voltage:

32 V

Maximum Reverse Voltage:

32 V

Semiconductor Material:

Silicon

Shape:

RECTANGULAR

Size:

4.4 mm

Sub-Category:

Photo Diodes

Terminal Finish:

TIN

Trade Compliance

QSB34ZR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.60.50

SB

8541.40.60.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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