Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi QSB34ZR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max reverse voltage of 32V. Ideal for infrared applications, it has a nominal light current of 0.037mA and max dark current of 30nA.
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Single configuration makes it easy to integrate into various electronics designs without the need for complex circuitry.
Compact size allows for flexibility in placement and integration, making it suitable for applications where space is limited.
Peak wavelength of 940nm makes this photodiode ideal for applications requiring sensitivity in the near-infrared spectrum.
PIN photodiodes offer high-speed response and low noise characteristics, making them suitable for applications requiring fast and accurate light detection.
High maximum operating temperature ensures reliable performance in demanding environments where temperature fluctuations may occur.
High reverse breakdown voltage provides protection against reverse bias conditions, enhancing the durability and longevity of the photodiode.
Rectangular shape simplifies the design and mounting process, allowing for easy installation in various electronic devices.
Low minimum operating temperature enables the photodiode to function effectively even in cold environments, expanding its versatility.
Tin terminal finish ensures good electrical contact and corrosion resistance, enhancing the reliability and longevity of the photodiode.
Nominal light current of 0.037 mA indicates high sensitivity to light, making it suitable for applications where accurate light detection is required.
Low dark current ensures minimal noise in the output signal, enabling precise detection of light signals even in low light conditions.
Inclusion of the infrared range makes this photodiode suitable for applications requiring detection of infrared light, expanding its utility.
High maximum reverse voltage provides overvoltage protection, safeguarding the photodiode from potential damage due to reverse bias conditions.
Silicon semiconductor material offers high sensitivity, low noise, and fast response time, making this photodiode ideal for a wide range of light detection applications.
Surface mount capability simplifies the integration process, allowing for easy and secure mounting on PCBs or other surfaces.
Photodiodes QSB34ZR attributes and parameters. Explore more Photodiodes devices from Onsemi
Additional Features:
Configuration:
Maximum Dark Current:
Infrared (IR) Range:
JESD-609 Code:
Nominal Light Current:
Mounting Feature:
No. of Functions:
Maximum Operating Temperature:
Minimum Operating Temperature:
Optoelectronic Type:
Peak Wavelength (nm):
Minimum Reverse Breakdown Voltage:
Maximum Reverse Voltage:
Semiconductor Material:
Shape:
Size:
Sub-Category:
Terminal Finish:
QSB34ZR Optoelectronics trade compliance attributes, and parameters.
HTS
8541.40.60.50
SB
PCN Design/Specification - Logo 17/Aug/2017
PCN Assembly/Origin - Mult Dev Assembly Chg 17/Nov/2020
PCN Packaging - Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
2N2222A
Continental Device India
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
1N4148
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
0460-202-16141
TE Connectivity
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
SMBJ18CA
Mde Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
DS18B20U
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
Hitano Enterprise
LL4148
Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
Comchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SPC TECHNOLOGY/ MULTICOMP
Bkc Semiconductors
1N4148WT
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDLL4148
Fairchild Semiconductor
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
BPW50C
Diodes Incorporated
PIN PHOTODIODE; Terminal Finish: TIN LEAD; Configuration: SINGLE; Additional Features: DAYLIGHT FILTER; Nominal Light Current: .035 mA; Maximum Dark Current: 20 nA;
124EA
Broadcom
Photo Diodes;
MICROFJ-SMTPA-30020-GEVB-PK
Onsemi
MICROFJ-SMTPA-30020-GEVB-PK by Onsemi is a 3.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 720nA. Ideal for applications requiring high sensitivity in optoelectronic systems.
BPV22NF
Temic Semiconductors
PIN PHOTODIODE; Configuration: SINGLE; Additional Features: SIDE VIEW; Maximum Dark Current: 30 nA; No. of Functions: 1; Maximum Operating Temperature: 100 Cel;
OP913WSL
Tt Electronics Plc
OP913WSL by Tt Electronics Plc is a single PIN photodiode with 8.13mm size, ideal for light detection applications. With a max operating temperature of 125°C and min reverse breakdown voltage of 32V, it offers fast response time of 0.00000005s and low dark current of 25nA for precise measurements in various environments.
KOM2100A
Infineon Technologies
Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 10 nA;
MICROFC-SMTPA-30020-GEVB-TR1
AVALANCHE PHOTODIODE;
MICROFC-SMTPA-30020-GEVB-TR
BPW50
PIN PHOTODIODE; Terminal Finish: TIN LEAD; No. of Functions: 1; Nominal Light Current: .02 mA; Infrared (IR) Range: YES; Minimum Reverse Breakdown Voltage: 32 V;
HSDL-5420-OPTION-011
PIN PHOTODIODE; Terminal Finish: Tin (Sn); Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Configuration: SINGLE; Size: 1.78 mm;
SFH200
Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Additional Features: HIGH RELIABILITY, LOW NOISE; Maximum Reverse Voltage: 1 V; Infrared (IR) Range: YES;
NDL5102C
Renesas Electronics
AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .0000000008 s; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 45 V;
HSDL-5420-OPTION-031
PIN PHOTODIODE; Terminal Finish: Tin (Sn); Peak Wavelength (nm): 875; Maximum Dark Current: 5 nA; No. of Functions: 1; Infrared (IR) Range: YES;
NDL5405L
PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000000003 s; Semiconductor Material: InGaAs;
BPV10
Vishay Intertechnology
Vishay Intertechnology's BPV10 is a 5mm PIN photodiode with peak wavelength of 920nm. It operates b/w -40°C to 100°C, with reverse breakdown voltage of 60V. Ideal for IR applications, it has fast response time of 0.0000000025s and low dark current of 5nA.
MICROFJ-30020-TSV-TR
MICROFJ-30020-TSV-TR by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
NR8800CS-BB-AZ
AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 30 nA;
MICROFJ-SMTPA-30035-GEVBPK
MICROFJ-SMTPA-30035-GEVBPK by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 3000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in harsh environments.
TIED55
Texas Instruments
TIED55 by Texas Instruments is an avalanche photodiode with a max operating temp of 125°C and min of -60°C. It has a max dark current of 0.03nA and can handle up to 185V reverse voltage. Ideal for optoelectronic applications requiring high sensitivity in harsh environments.
MICROFJ-SMTPA-60035-GEVB-PK
MICROFJ-SMTPA-60035-GEVB-PK by Onsemi is a 6.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 12000nA. Ideal for applications requiring high sensitivity in optoelectronics and photonics.
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QSB34GR
PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Reverse Breakdown Voltage: 32 V; Minimum Operating Temperature: -25 Cel; Maximum Reverse Voltage: 32 V;
The Onsemi QSB34GR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max reverse voltage of 32V. Ideal for infrared applications, it has a size of 4.4mm and nominal light current of 0.037mA.
QSB34CGR
PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Reverse Breakdown Voltage: 32 V; Additional Features: DAYLIGHT FILTER; Shape: RECTANGULAR;
The Onsemi QSB34CGR is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max reverse voltage of 32V and dark current of 30nA. Ideal for infrared applications, it features a rectangular shape measuring 4.4mm and surface mounting feature.
QSB34CZR
PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel;
PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: TIN; Nominal Light Current: .037 mA; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE;
QSB34ZR
PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Dark Current: 30 nA; Semiconductor Material: Silicon; No. of Functions: 1;
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